Photoluminescence Properties of Nanoheterogenic Film Structures of NCs CdTe/TGA/Vinyl Acetate-Acrylate Copolymer
| Authors | O.A. Kapush1, S.I. Budzulyak1 , D.V. Korbutyak1 , K.S. Dremlyuzhenko1, Kulchitsky1, О.G. Kosinov1, A.I. Yemets2 |
| Affiliations |
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, Nauki Ave., 03028 Kyiv, Ukraine 2Institute of Food Biotechnology and Genomics NAS of Ukraine, 2a, Osypovskyi, 04123 Kyiv, Ukraine |
| Е-mail | savchuk-olja@ukr.net |
| Issue | Volume 10, Year 2018, Number 4 |
| Dates | Received 08 February 2018; revised manuscript received 14 August 2018; published online 25 August 2018 |
| Citation | O.A. Kapush, S.I. Budzulyak, D.V. Korbutyak, et al., J. Nano- Electron. Phys. 10 No 4, 04009 (2018) |
| DOI | http://dx.doi.org/10.21272/jnep.10(4).04009 |
| PACS Number(s) | 78.67.Bf, 81.07.Ta, 82.35.Np |
| Keywords | Cadmium Telluride (2) , Nanocrystal (14) , Vinyl acetate-acrylate copolymer, Photoluminescence spectra. |
| Annotation |
The physicochemical properties of low-dimensional structures based on cadmium telluride obtained by the colloidal synthesis method are investigated. It is established that the change in the ratio of the [Cd2+]: [Te2–] concentrations in the reaction medium significantly influences the properties of the colloidal synthesis of CdTe NCs. It is shown that the ratio of 8: 1 is the optimal ratio of the concentrations of [Cd2 +]: [Te2–] to obtain NCs of CdTe. It is shown that the use of a vinyl acetate-acrylate copolymer as a matrix material for the transfer of NCs CdTe from colloidal solutions allows obtaining non-toxic Nanoheterogeneous film structures, characterized by satisfactory optical properties. The main photoluminescent characteristics of the materials under study are analyzed. |
|
List of References English version of article |
Other articles from this number
1) Impact of Sputtering Pressure on Structural, Optical, Electrical and Morphological Properties of Titanium Doped Zinc Oxide Thin films Using Metallic Target [04001-1-04001-5]2) Topography and Surface Density of Electron States on Juvenile and Defect Nanostructured (100) Cleavage Surfaces of In4Se3 Layered Crystals [04002-1-04002-12]
3) New Nonrelativistic Three-Dimensional Spectroscopic Studies of NMGECSC Potential in Presence of External Electric [04003-1-04003-8]
4) Parametric Study of Stacked Microstrip Patch Antenna with Dissimilar Substrates [04004-1-04004-4]
5) Kinetics of Blue Emission during Ultraviolet Insolation on Germanosilicate Optical Fiber [04005-1-04005-5]
6) Electrons Extraction from MWCNT/PEO Composites [04006-1-04006-5]
7) Optimizing Combination of Parameters for Pull-off Adhesion Testing through Design of Experiment Study [04007-1-04007-7]
8) Thermodynamic Analysis of the Crystallization Process of Alloys Ni-Zr System [04008-1-04008-4]
9) The Mechanism of Voltage Oscillations in a Siliceous Structure with the Occurrence of Extreme Currents [04010-1-04010-4]
10) The Theoretical Study of Electron Dispersion of Some Liquid Metals Using Transition Metal Model Potential (TMMP) [04011-1-04011-4]
11) An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET [04012-1-04012-5]
12) Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D [04013-1-04013-4]
13) Gunn Diodes Based on Graded InGaP-InPAs [04014-1-04014-6]
14) Peculiarities of Electroconductivity and Magnetoresistance in Silicon Whiskers with Doping Concentration in the Vicinity to Metal-insulator Transition at Low Temperatures [04015-1-04015-7]
15) Magnetoresistive and Magnetooptical Properties of Double-component Film Alloys Based on Iron [04016-1-04016-4]
16) A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Tempera-ture Dependent Foster (RC) Thermal Network [04017-1-04017-5]
17) Dislocation Hysteresis in Mixed State of Superconductor II Тype [04018-1-04018-6]
18) p-i-n Photodiode Based on Silicon with Short Rise Time [04019-1-04019-5]
19) Improvement of Electrochemical Supercapacitors by Using Nanostructured Semiconductors [04020-1-04020-6]
20) Computer Simulation of the Negative Hydrogen Ion Source Extraction System Using IBSimu Package [04021-1-04021-9]
21) Photoinduced Spatiotemporal Oscillations and Self-Organization of Dissipative Structures in Polymer-Immobilized Dispersed Semiconductors [04022-1-04022-8]
22) Investigation of Photoelectric Converters Based on Different Semiconductor Materials [04023-1-04023-6]
23) Electrical Conductivity and Dielectric Relaxation Processes of the Ceramic System Y2O3-ZrO2-SrTiO3-BiScO3 [04024-1-04024-4]
24) Increase the Efficiency of the Linear Piezoelectric Motor [04025-1-04025-5]
25) Quantum Colliding of Two the Vertical Bloch Lines in the Domain Walls of Uniaxial Ferromagnetic Film [04026-1-04026-4]
26) A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs [04027-1-04027-4]
27) The Increase in the Probability of Failure-Free Operation of the IR-Devices Homing and Tracking by the of Electron Beam Processing of Optical Fairings on the Areas [04028-1-04028-7]
28) PbMnI2 Magnetic Studies of PbMnI2 Layered Diluted Magnetic Semiconductor Nanoparticles [04029-1-04029-5]
29) Ab initio Calculation of Impurity-Dislocation Interaction in Silicon [04030-1-04030-5]
30) Influence of Heat Treatment Conditions on the Magnetoresistive Properties of Three-layer Structures Fe0,2Co0,8/Cu/Fe0,2Co0,8 [04031-1-04031-5]
31) Features of the Structure of the FeCoNiCrMn High Entropy Alloys [04032-1-04032-10]
32) Anthracite-derived Porous Carbon as Electrode Material of Lithium Power Sources [04033-1-04033-5]
33) Ab initio Study of the Effect of H2O Molecules Adsorption on the Semiconducting Graphene Nanoribbon [04034-1-04034-3]
