Gunn Diodes Based on Graded InGaP-InPAs

Authors I.P. Storozhenko1, 2 , M.V. Kaydash2, 3
Affiliations

1V. Karazin Kharkiv National University, 4, Svoboda Sq., 61077 Kharkiv, Ukraine

2National University of Pharmacy, 53, Pushkinska Str., 61002 Kharkiv, Ukraine

3Ivan Kozhedub National Air Force, 77/79, Sumska Str., 61023 Kharkiv, Ukraine

Е-mail [email protected]
Issue Volume 10, Year 2018, Number 4
Dates Received 18 May 2018; revised manuscript received 14 August 2018; published online 25 August 2018
Citation I.P. Storozhenko, M.V. Kaydash, J. Nano- Electron. Phys. 10 No 4, 04014 (2018)
DOI http://dx.doi.org/10.21272/jnep.10(4).04014
PACS Number(s) 85.30.Fg, 73.40.Kp, 73.40. – с
Keywords Gunn diode, Intervalley electron transfer, Graded semiconductor, Output power (3) , Domain (10) , Generation efficiency (2) , The temperature model, Terahertz electronics, Microwave generation, Indium phosphide, Indium arsenide, Gallium phosphide, InGaPAs.
Annotation

Nowadays, graded semiconductors attract developers' interest as prospective material which can improve the interaction of the electric field and the electrons in the devices operating on the intervalley electron transfer effect. This effect increases the efficiency and power output of the generation of current oscillations in Gunn diodes. To obtain the best effect graded semiconductor must be optimal by the dependence of the energy gap between the nonequivalent valleys of the conduction band on the coordinate. This paper deals with the results of the investigation of Gunn diodes operation based on graded InGaP-InPAs by means of the temperature model of intervalley electron transfer in graded semiconductors. The paper presents the results of the numerical experiments on efficient generation of electromagnetic waves in the range from 18 to 80 GHz using graded InxGa1 – xP-InPyAs1 – y Gunn diodes with the active region length of 2.5 mm and concentration of ionized impurities therein of 1016 cm – 3. Our findings are the dependences generation efficiency and output power on frequency for different distributions of GaP and InAs in InxGa1 – xP-InPyAs1 – y. We have compared obtained results with similar AlxGa1 – xAs-GaAs-Ga1 – yInyAs-diodes. The maximal obtained power in InxGa1 – xP-InPyAs1 – y-diode is 11.3 kW×cm – 2 at a frequency of 40 GHz with an efficiency of 10.2 % at x = 0.6 and y = 0.6.

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