Gunn Diodes Based on Graded InGaP-InPAs
| Authors | I.P. Storozhenko1, 2 , M.V. Kaydash2, 3 |
| Affiliations |
1V. Karazin Kharkiv National University, 4, Svoboda Sq., 61077 Kharkiv, Ukraine 2National University of Pharmacy, 53, Pushkinska Str., 61002 Kharkiv, Ukraine 3Ivan Kozhedub National Air Force, 77/79, Sumska Str., 61023 Kharkiv, Ukraine |
| Е-mail | prof.igor.storozhenko@gmail.com |
| Issue | Volume 10, Year 2018, Number 4 |
| Dates | Received 18 May 2018; revised manuscript received 14 August 2018; published online 25 August 2018 |
| Citation | I.P. Storozhenko, M.V. Kaydash, J. Nano- Electron. Phys. 10 No 4, 04014 (2018) |
| DOI | http://dx.doi.org/10.21272/jnep.10(4).04014 |
| PACS Number(s) | 85.30.Fg, 73.40.Kp, 73.40. – с |
| Keywords | Gunn diode, Intervalley electron transfer, Graded semiconductor, Output power (3) , Domain (10) , Generation efficiency (2) , The temperature model, Terahertz electronics, Microwave generation, Indium phosphide, Indium arsenide, Gallium phosphide, InGaPAs. |
| Annotation |
Nowadays, graded semiconductors attract developers' interest as prospective material which can improve the interaction of the electric field and the electrons in the devices operating on the intervalley electron transfer effect. This effect increases the efficiency and power output of the generation of current oscillations in Gunn diodes. To obtain the best effect graded semiconductor must be optimal by the dependence of the energy gap between the nonequivalent valleys of the conduction band on the coordinate. This paper deals with the results of the investigation of Gunn diodes operation based on graded InGaP-InPAs by means of the temperature model of intervalley electron transfer in graded semiconductors. The paper presents the results of the numerical experiments on efficient generation of electromagnetic waves in the range from 18 to 80 GHz using graded InxGa1 – xP-InPyAs1 – y Gunn diodes with the active region length of 2.5 mm and concentration of ionized impurities therein of 1016 cm – 3. Our findings are the dependences generation efficiency and output power on frequency for different distributions of GaP and InAs in InxGa1 – xP-InPyAs1 – y. We have compared obtained results with similar AlxGa1 – xAs-GaAs-Ga1 – yInyAs-diodes. The maximal obtained power in InxGa1 – xP-InPyAs1 – y-diode is 11.3 kW×cm – 2 at a frequency of 40 GHz with an efficiency of 10.2 % at x = 0.6 and y = 0.6. |
|
List of References |
Other articles from this number
1) Impact of Sputtering Pressure on Structural, Optical, Electrical and Morphological Properties of Titanium Doped Zinc Oxide Thin films Using Metallic Target [04001-1-04001-5]2) Topography and Surface Density of Electron States on Juvenile and Defect Nanostructured (100) Cleavage Surfaces of In4Se3 Layered Crystals [04002-1-04002-12]
3) New Nonrelativistic Three-Dimensional Spectroscopic Studies of NMGECSC Potential in Presence of External Electric [04003-1-04003-8]
4) Parametric Study of Stacked Microstrip Patch Antenna with Dissimilar Substrates [04004-1-04004-4]
5) Kinetics of Blue Emission during Ultraviolet Insolation on Germanosilicate Optical Fiber [04005-1-04005-5]
6) Electrons Extraction from MWCNT/PEO Composites [04006-1-04006-5]
7) Optimizing Combination of Parameters for Pull-off Adhesion Testing through Design of Experiment Study [04007-1-04007-7]
8) Thermodynamic Analysis of the Crystallization Process of Alloys Ni-Zr System [04008-1-04008-4]
9) Photoluminescence Properties of Nanoheterogenic Film Structures of NCs CdTe/TGA/Vinyl Acetate-Acrylate Copolymer [04009-1-04009-4]
10) The Mechanism of Voltage Oscillations in a Siliceous Structure with the Occurrence of Extreme Currents [04010-1-04010-4]
11) The Theoretical Study of Electron Dispersion of Some Liquid Metals Using Transition Metal Model Potential (TMMP) [04011-1-04011-4]
12) An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET [04012-1-04012-5]
13) Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D [04013-1-04013-4]
14) Peculiarities of Electroconductivity and Magnetoresistance in Silicon Whiskers with Doping Concentration in the Vicinity to Metal-insulator Transition at Low Temperatures [04015-1-04015-7]
15) Magnetoresistive and Magnetooptical Properties of Double-component Film Alloys Based on Iron [04016-1-04016-4]
16) A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Tempera-ture Dependent Foster (RC) Thermal Network [04017-1-04017-5]
17) Dislocation Hysteresis in Mixed State of Superconductor II Тype [04018-1-04018-6]
18) p-i-n Photodiode Based on Silicon with Short Rise Time [04019-1-04019-5]
19) Improvement of Electrochemical Supercapacitors by Using Nanostructured Semiconductors [04020-1-04020-6]
20) Computer Simulation of the Negative Hydrogen Ion Source Extraction System Using IBSimu Package [04021-1-04021-9]
21) Photoinduced Spatiotemporal Oscillations and Self-Organization of Dissipative Structures in Polymer-Immobilized Dispersed Semiconductors [04022-1-04022-8]
22) Investigation of Photoelectric Converters Based on Different Semiconductor Materials [04023-1-04023-6]
23) Electrical Conductivity and Dielectric Relaxation Processes of the Ceramic System Y2O3-ZrO2-SrTiO3-BiScO3 [04024-1-04024-4]
24) Increase the Efficiency of the Linear Piezoelectric Motor [04025-1-04025-5]
25) Quantum Colliding of Two the Vertical Bloch Lines in the Domain Walls of Uniaxial Ferromagnetic Film [04026-1-04026-4]
26) A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs [04027-1-04027-4]
27) The Increase in the Probability of Failure-Free Operation of the IR-Devices Homing and Tracking by the of Electron Beam Processing of Optical Fairings on the Areas [04028-1-04028-7]
28) PbMnI2 Magnetic Studies of PbMnI2 Layered Diluted Magnetic Semiconductor Nanoparticles [04029-1-04029-5]
29) Ab initio Calculation of Impurity-Dislocation Interaction in Silicon [04030-1-04030-5]
30) Influence of Heat Treatment Conditions on the Magnetoresistive Properties of Three-layer Structures Fe0,2Co0,8/Cu/Fe0,2Co0,8 [04031-1-04031-5]
31) Features of the Structure of the FeCoNiCrMn High Entropy Alloys [04032-1-04032-10]
32) Anthracite-derived Porous Carbon as Electrode Material of Lithium Power Sources [04033-1-04033-5]
33) Ab initio Study of the Effect of H2O Molecules Adsorption on the Semiconducting Graphene Nanoribbon [04034-1-04034-3]
