Grain Boundaries and Electrical Properties of Thin Films of PbTe-Bi2Te3 Solid Solutions

Authors D.M. Freik1 , B.S. Dzundza1 , L.Yo. Mezhylovska1, I.B. Gatala1, S.I. Mudryy2

1 Vasyl Stefanyk Precarpathian National University 57, Shevchenko Str., 76018 Ivano-Frankivsk, Ukraine

2 Ivan Franko Lviv National University 1, University Str., 79000 Lviv, Ukraine

Е-mail [email protected]
Issue Volume 6, Year 2014, Number 2
Dates Received 26 February 2014; revised manuscript received 24 March 2014; published online 20 June 2014
Citation D.M. Freik, B.S. Dzundza, L.Yo. Mezhylovska, et al., J. Nano- Electron. Phys. 6 No 2, 02020 (2014)
PACS Number(s) 68.37.Hk, 78.66.Hf, 81.15.Ef
Keywords Thin films (60) , Lead Telluride, Solid solutions (2) , Thermoelectric properties (3) .
Annotation The structure and electrical properties of thin films based on PbTe-Bi2Te3 solid solutions with different composition deposited in vacuum on glass ceramic and mica substrates are studied. It is established that vapor-phase condensate has a mosaic structure formed by the Volmer-Weber mechanism of nucleation and implementation of the processes of nucleation, aggregation and coalescence of nanocrystallites. Based on the electrical model, the thickness h and resistivity H of grain boundaries are determined. It is shown that with increasing content of Bi2Te3 increase in the values of h and H takes place and the latter is one order of magnitude more than the grain re-sistance 0.

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