Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas Mixture

Authors A.S. Kornyushchenko

Sumy State University, 2, Rimsky Korsakov Str., 40007 Sumy, Ukraine

Е-mail [email protected]
Issue Volume 6, Year 2014, Number 2
Dates Received 14 March 2014; revised manuscript received 14 April 2014; published online 20 June 2014
Citation A.S. Kornyushchenko, J. Nano- Electron. Phys. 6 No 2, 02017 (2014)
PACS Number(s) 81.07.Bc, 81.10.Bk, 81.15.Cd.
Keywords Aluminum nitride, Near-equilibrium steady-state condensation, Reactive magnetron sputtering, Plasma-condensate accumulation system.
Annotation The influence of technological parameters, such as discharge power, working gas pressure, growth surface temperature, on the formation mechanisms and main characteristics of aluminum nitride has been investigated in the work. On the basis of optimization of the stated technological parameters, the aluminum nitride layers close to stoichiometric composition having hexagonal crystal lattice of wurtzite type have been obtained. The investigations of the structure, phase composition and microhardness have been performed for the layers with elemental composition closest to the stoichiometric one. The microhardness of the layers obtained varies from 0.760 to 1.12 GPa.

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