Multiangular and Spectral Ellipsometry for Semiconductor Nanostructures Classification

Authors A.A. Goloborodko , M.V. Epov, L.Y. Robur , T.V. Rodionova
Affiliations

Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska Str., 01601 Kyiv, Ukraine

Е-mail [email protected]
Issue Volume 6, Year 2014, Number 2
Dates Received 11 November 2013; published online 20 June 2014
Citation A.A. Goloborodko, M.V. Epov, L.Y. Robur, T.V. Rodionova, J. Nano- Electron. Phys. 6 No 2, 02002 (2014)
DOI
PACS Number(s) 78.40.Fy, 78.66.Jg
Keywords Polysilicon film, Spectral ellipsometry, Reflection coefficient (3) , Refraction index, Absorption index.
Annotation The possibilities of multiparameter determination of semiconductor nanostructures based on spectral dependencies of polarized radiation reflection coefficient Rp, Rs on the incidence angle in the range of 200-800 nm are investigated. Experimental data have shown high sensitivity of reflection coefficients angular dependence to the type of polycrystalline structures at the same film thickness. The presence of additional extremums in spectral dependence of refraction and absorption indexes is detected; this could be connected with grain size of polycrystalline structure and type of grain boundaries. The possibility of multiparameter optical research of properties and thickness of semiconductor layers on Si substrate is shown.

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