Analysis of the Elemental Composition of Cu2ZnSnSe4 Films by the PIXE and μ-PIXE Methods

Authors A.S. Opanasyk1, P.V. Koval1 , D.V. Magilin2 , A.A. Ponomarev2, H. Cheong3

1 Sumy State University, 2, Rimsky Korsakov Str., 40007 Sumy, Ukraine

2 Institute of Applied Physics of NAS of Ukraine, 58, Petropavlovskaya Str., 40000 Sumy, Ukraine

3 Sogang University, 1, Shinsu-dong, Mapo-gu, 121-742 Seoul, Korea

Issue Volume 6, Year 2014, Number 2
Dates Received 23 March 2014; published online 20 June 2014
Citation A.S. Opanasyk, P.V. Koval, D.V. Magilin, et al., J. Nano- Electron. Phys. 6 No 2, 02019 (2014)
PACS Number(s) 68.55.Nq
Keywords Elemental composition (2) , Cu2ZnSnSe4 film, PIXE (2) , μ-PIXE techniques.
Annotation By X-ray characteristic radiation induced by focused proton beam, the distribution of compound components over the area of Cu2ZnSnSe4 (-PІXE) films is investigated and their elemental composition (PІXE) is determined. Nuclear scanning microprobe with the proton beam energy of 1,5 MeV and the transverse dimension of the probe of 4 × 4 m2 was used for the method realization. Films of four-component compound were obtained under different physical and technological deposition modes by the thermal co-evaporation of the components using electron-beam gun. Sodium glass with molybdenum sublayer heated to 400 C was used as the substrate. As a result of investigations it was established that the distribution of elements over the film area is homogeneous and their composition is determined by physical and technological conditions of preparation.

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