Mechanism of Origin and Neutralization of Residual Triboelectricity at Scanning of Dielectric Surfaces by a Silicon Probe of the Atomic-force Microscope

Authors М.А. Bondarenko1, S.A. Bilokon1, V.S. Antonyuk2 , Iu.Iu. Bondarenko1
Affiliations

1 Cherkassy State Technological University, 460, Shevchenko Boul., 18006 Cherkassy, Ukraine

2 National Technical University of Ukraine "Kyiv Polytechnic Institute", Peremohy Ave., 37, 03056 Kyiv-56, Ukraine

Е-mail [email protected]
Issue Volume 6, Year 2014, Number 2
Dates Received 16 March 2014; published online 20 June 2014
Citation М.А. Bondarenko, S.A. Bilokon, V.S. Antonyuk, Iu.Iu. Bondarenko, J. Nano- Electron. Phys. 6 No 2, 02018 (2014)
DOI
PACS Number(s) 07.79.Lh, 41.20.Cv, 81.05. – t, 34.35. + a
Keywords Atomic-force microscopy, Triboelectricity, Dielectric surface, Silicon probe, Multiphoton ionization.
Annotation The reasons and mechanism of the destructive effect of the electrostatic interaction forces of silicon probe and dielectric surfaces are established in the paper at the investigation of the surface microgeometry and mechanical characteristics by the atomic-force microscopy method. Calculation of the electrostatic interaction forces of two silicon surfaces is carried out and the destructive effect of electrostatic discharge appearing as a result of triboelectric effect is determined. The module of removal of electrostatic charge is proposed. Its principle of operation consists in the formation of the conduction band in the place of contact of two dielectrics by the multiphoton ionization. It is shown that application of such method of neutralization of residual triboelectricity improves accuracy, reliability, and reproducibility of the scanning results.

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