A Perspective on Zinc Oxide Based Diluted Magnetic Semiconductors

Автори Rana Mukherji1 , Vishal Mathur1 , M. Mukherji2

1The ICFAI University, Jaipur, India

2Amity University Rajasthan, Jaipur, India

Е-mail rana.mukherji@gmail.com, wishalmathur@gmail.com, manishita@outlook.com
Випуск Том 10, Рік 2018, Номер 5
Дати Одержано 25.07.2018; у відредагованій формі 20.10.2018; опубліковано online 29.10.2018
Посилання Rana Mukherji, Vishal Mathur, M. Mukherji, J. Nano- Electron. Phys. 10 No 5, 05008 (2018)
DOI https://doi.org/10.21272/jnep.10(5).05008
PACS Number(s) 85.75.d, 75.50.Pp, 75.50.Bb, 77.84.Bw
Ключові слова Spintronics (2) , Dilute magnetic semiconductors (DMS), Room temperature (3) , Ferromagnetism (RTFM), Zinc oxide (ZnO).

Diluted magnetic semiconductor (DMS) is envisaged to portray a substantial position in inter-punitive material science and prospect spintronics. The reason being spin and charge degrees of freedom are accommodated into solitary matter and their interaction is anticipated to probe innovative electronic devices. DMSs evince multifarious advantages such as wide band gap apposite for applications with short wavelength light, transparency and dye ability with pigments, high carrier concentration, capability to be cultivated even on plastic substrate at low temperature, green safety, durability , most importantly economical. Various theoretical and experimental research findings have been proposed on the ferromagnetic, paramagnetic, antiferromagnetic and spin glass properties at room-temperature of transition metal-doped DMSs such as TiO2, ZnO, Cu2O, SnO2, In2O3 etc in last few years. The objective of the paper is to comprehend the recent research advancement of ZnO based DMS specimens doped with various 3d transition metals.

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