Investigation of Absorber Layer Thickness Effect on CIGS Solar Cell in Different Cases of Buffer Layers

Автори Benslimane Hassane, Dennai Benmoussa
Приналежність

Physics and Semiconductors Devices Laboratory, Materials Science Departement, Tahri Mohammed University, BP. 417, Bechar, Algeria

Е-mail hassane_ben@yahoo.fr
Випуск Том 10, Рік 2018, Номер 5
Дати Одержано 22.06.2018; у відредагованій формі 24.10.2018; опубліковано online 29.10.2018
Посилання Benslimane Hassane, Dennai Benmoussa, J. Nano- Electron. Phys. 10 No 5, 05044 (2018)
DOI https://doi.org/10.21272/jnep.10(5).05044
PACS Number(s) 84.60.Jt
Ключові слова Solar cell (51) , CIGS (11) , Buffer layer (2) , Efficiency (24) , AMPS-1D (10) .
Анотація

This study investigates the interplay between the absorber layer of Cu(In,Ga)Se2 solar cells and the buffer layer of these devices. Cu(In,Ga)Se2 devices with absorbers of different thicknesses and different buffer layers are simulated. We found that the reduction in thickness of the CIGS cell leads to decrease short-circuit current, it is the main cause of degradation photovoltaic conversion efficiency. It has been found that substitution of the CdS buffer layer by other materials such as ZnS can limit this performance degradation.

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