Structural and Optoelectronic Properties of Polycrystalline CdS Thick Film Prepared by Screen Printing

Автори B.Y. Bagul1,2, P.S. Sonawane2, A.Z. Shaikh2, Y.N. Rane3, S.R. Gosavi3
Приналежність

1Vasantrao Naik Arts, Commerce and Science College Shahada, 425409, M.S., India

2Material Research Laboratory, P.G. Department of Physics, Pratap College, Amalner, 425401, M.S., India

3Material Research Laboratory, C. H. C. Arts, S. G. P. Commerce, and B.B.J.P. Science College, Taloda, 425413, (M.S.) India

Е-mail srgosavi.taloda@gmail.com
Випуск Том 10, Рік 2018, Номер 5
Дати Одержано 15.07.2018; у відредагованій формі 21.10.2018; опубліковано online 29.10.2018
Посилання B.Y. Bagul, P.S. Sonawane, A.Z. Shaikh, et al., J. Nano- Electron. Phys. 10 No 5, 05018 (2018)
DOI https://doi.org/10.21272/jnep.10(5).05018
PACS Number(s) 61.72.uj, 77.84.Bw, 85.40.Xx, 73.61.Ga, 51.50. + v
Ключові слова II-VI semiconductors (3) , Metal chalcogenide, Thick film, Optical properties (22) , Electrical properties (19) .
Анотація

The paper describes structural, optical and electrical properties of CdS thick film prepared by using screen printing method. For the preparation of CdS thick film, powder of CdS nanoparticles was prepared by using chemical precipitation method using cadmium acetate and sodium sulfide as a source of Cd and S respectively. XRD pattern confirms the formation of pure hexagonal CdS phase with crystallite size of the order of 19.41 nm and 21.14 nm respectively, for as prepared and annealed CdS thick films. The surface morphology studies shows that the films covered with spherical grains uniformly distributed over the substrate free from crack and pinholes where as elemental analysis revealed the presence of Cd and S elements in the prepared film. The absorption spectra of as prepared and sintered CdS thick film were recorded by using JASCO V-630 spectrophotometer in the wavelength range of 400-900 nm from which energy band gap has been determined and is found to be 2.47 eV and 2.39 eV for as prepared and sintered CdS thick film, respectively. Electrical analysis showed the semiconducting behavior of the prepared material.

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