Charge Based Quantization Model for Triple-Gate FINFETS

Автори P. Vimala
Приналежність

Dayananda Sagar College of Engineering, S.M Hills-560078, Bengaluru, India

Е-mail ervimala@gmail.com
Випуск Том 10, Рік 2018, Номер 5
Дати Одержано 23.08.2018; у відредагованій формі 22.10.2018; опубліковано online 29.10.2018
Посилання P. Vimala, J. Nano- Electron. Phys. 10 No 5, 05015 (2018)
DOI https://doi.org/10.21272/jnep.10(5).05015
PACS Number(s) 03.65. – W, 85.30. – z
Ключові слова Analytical Model (3) , Tri-Gate MOSFET, Poisson’s equation (4) , Drain current model (2) , Transconductance (3) , C-V curve.
Анотація

In this article we have developed an analytical model for Tri gate Metal oxide semiconductor field effect transistor (MOSFET) by including quantum effects. The coupled Schrödinger and Poisson’s equation is solved using variational approach to develop an analytical quantum model. An analytical model for charge centroid is obtained and then inversion charge model is developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. The compact model is shown to reproduce transfer characteristics, transconductance and C-V curve of tri gate MOSFET using the model. The modeled results are then compared to the simulated results. The comparison shows the accuracy of the proposed model.

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