Semiholographic Approach in Calculation of Tunneling Current in Graphene with Deep Impurities

Автори M.B. Belonenko1,2 , N.N. Konobeeva1
Приналежність

1 Volgograd State University, 400062 Volgograd, Russia

2 Laboratory of Nanotechnology, Volgograd Institute of Business, 400048 Volgograd, Russia

Е-mail belonenko@volsu.ru, yana_nn@volsu.ru
Випуск Том 8, Рік 2016, Номер 4
Дати Одержано 18.06.2016, у відредагованій формі - 22.11.2016, опубліковано online - 29.11.2016
Посилання M.B. Belonenko, N.N. Konobeeva, J. Nano- Electron. Phys. 8 No 4(1), 04029 (2016)
DOI 10.21272/jnep.8(4(1)).04029
PACS Number(s) 73.20. At, 73.22.Pr
Ключові слова Tunneling current, Deep impurity, Semiholographic approach.
Анотація In this paper, we investigated the influence of deep impurity in graphene on the tunneling current in the contact with a metal. A ballistic current in graphene was calculated. The dependence of current-voltage characteristic of the contact on transition energy between the impurity and the graphene was analyzed.

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