Автори | Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza |
Афіліація | Department of Electronic and Electrical Engineering, Faculty of Technology, University of Abou-Bekr Belkaid, Tlemcen, Algeria |
Е-mail | f_rahou@yahoo.fr |
Випуск | Том 8, Рік 2016, Номер 4 |
Дати | Одержано 22.04.2016, у відредагованій формі - 22.11.2016, опубліковано online - 29.11.2016 |
Цитування | Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza, J. Nano- Electron. Phys. 8 No 4(1), 04037 (2016) |
DOI | 10.21272/jnep.8(4(1)).04037 |
PACS Number(s) | 85.30.Tv |
Ключові слова | Technology SOI, Short-channel effects (SCEs), Multi-gate SOI MOSFET, SOI TRI-GATE FinFET, High-k dielectric (2) , Silvaco Software. |
Анотація | The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN, which giving better subthreshold swing (SS), drain-induced barrier lowing (DIBL), leakage current Ioff and Ion/Ioff ratio. |
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