Автори | A. Kumar , A. Chaudhry, V. Kumar , V. Sharma |
Афіліація | UIET, Panjab University, Sector-14, Chandigarh, India |
Е-mail | ajaymoudgil01@gmail.com |
Випуск | Том 8, Рік 2016, Номер 4 |
Дати | Одержано 23.09.2016, у відредагованій формі - 22.11.2016, опубліковано online - 29.11.2016 |
Цитування | A. Kumar, A. Chaudhry, V. Kumar, V. Sharma, J. Nano- Electron. Phys. 8 No 4(1), 04042 (2016) |
DOI | 10.21272/jnep.8(4(1)).04042 |
PACS Number(s) | 85.30.Tv |
Ключові слова | Triple Material Double Gate (TMDG), Junctionless field effect transistor (JLFET), Surface Potential (9) , Centre potential. |
Анотація | In this paper, a two dimensional analytical Surface Potential model for the triple material double gate (TMDG) junctionless-field effect transistor (JLFET) in sub-threshold region has been presented. The effect of source and drain depletion width has also been taken into account. We have solved two-dimensional Poisson’s equation for the Surface Potential. Then the centre potential and the electric field is also obtained. We have calculated the surface potential for different channel lengths. All the modelled results are then compared with the simulated results of the 2D device simulator TCAD. |
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