Solid-state Dewetting Formation of In/InTe Nanosystem

Authors P.V. Galiy1, T.M. Nenchuk1, A. Ciszewski2, P. Mazur2, O.V. Tsvetkova1, V.I. Dzyuba1, T.R. Makar1

1Ivan Franko Lviv National University, 50 Dragomanov St., 79005 Lviv, Ukraine

2Institute of Experimental Physics, University of Wroclaw, 9, pl. Maxa Borna, 50-204 Wroclaw, Poland

Е-mail [email protected]
Issue Volume 13, Year 2021, Number 4
Dates Received 25 June 2021; revised manuscript received 10 August 2021; published online 20 August 2021
Citation P.V. Galiy, T.M. Nenchuk, A. Ciszewski, et al., J. Nano- Electron. Phys. 13 No 4, 04032 (2021)
PACS Number(s) 68.37.Ef, 68.37.Ps, 68.47.De, 68.47.Fg, 73.20.At,, 81.65.Cf, 79.60. – i
Keywords Layered chalcogenides, Self-assembling nanostructures, Solid-state dewetting, Scanning tunneling microscopy/spectroscopy, Atomic force microscopy (9) , X-ray photoelectron spectroscopy (3) , Low energy electron diffraction.

Solid-state dewetting (SSD) method as a promising way to obtain nanostructures was applied for the formation of In/InTe nanosystem. The phase-elemental composition and structural perfection of the initial InTe surface were characterized by X-ray photoelectron spectroscopy, low energy electron diffraction (LEED) and atomic force microscopy (AFM). X-ray diffraction (XRD) studies revealed the InTe tetragonal crystal structure of the TlSe type (I4/mcm space group, lattice parameters a ( 8.4414(6) Å, c ( 7.1333(5) Å). Scanning tunneling microscopy (STM) studies of the initial InTe (001) surface and the same one used as an ordered template after thermal indium deposition showed that the shape and arrangement of indium-induced nanostructures are powered by square surface lattice symmetry as derived from a tetragonal InTe bulk one. We observed the formation of nanosized 0D structures as a result of the SSD process due to surface heating above the indium melting point. The scanning tunnelling spectroscopy (STS) revealed correlation between indium coverage kinetics and an increase in the amount of density of states (DOS) at the surface within the band gap of InTe.

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