Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures

Authors V.B. Brytan1, R.M. Peleshchak2, Y.O. Uhrun1, M.Ya. Seneta1, O.H. Tadeush3

1Drohobych Ivan Franko State Pedagogical University, 24, I. Franko St., 82100 Drohobych, Ukraine

2Lviv Polytechnic National University, Lviv, Ukraine

3K.D. Ushinsky South Ukrainian National Pedagogical University, Odesa, Ukraine

Issue Volume 13, Year 2021, Number 4
Dates Received 21 March 2021; revised manuscript received 15 August 2021; published online 25 August 2021
Citation V.B. Brytan, R.M. Peleshchak, Y.O. Uhrun, et al., J. Nano- Electron. Phys. 13 No 4, 04024 (2021)
PACS Number(s) 73.40.Qv, 74.25.Fy
Keywords Cd1 – xZnxTe single crystal, Resolution, Passivation, Deformation (8) , Electrostatic-deformation.

An electrostatic-deformation model of atomic hydrogen passivation of electrically active centers of the type of compression defects in Cd1 – xZnxTe semiconductors is proposed. It is found that the effect of increasing passivation of electrically active centers in Cd1 – xZnxTe occurs when the concentration of atomic hydrogen NH does not exceed the concentration of acceptors NA (NH ≤ NA), and weakening of the passivation effect is observed when the concentration of atomic hydrogen NH is much higher than the concentration of acceptors NA (NH ≥ NA). The expression for the resolution Ri of optical-registering metal-dielectric-semiconductor nanostructures Cd1 – xZnxTe (0 ≤ x ≤ 1) is obtained and the resolution value for nonpassivated as well as for passivated in the hydrogen atmosphere semiconductor material Cd0.8Zn0.2Te is calculated, which is R1 = 6682 and R2 = 17423, respectively. A method for expanding the spectral range of optical information recording based on n-p-i-m nanostructures by changing the composition (0 ≥ x ≥ 1) of the solid solution Cd1 – xZnxTe is proposed.

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