Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures
| Authors | V.B. Brytan1, R.M. Peleshchak2, Y.O. Uhrun1, M.Ya. Seneta1, O.H. Tadeush3 |
| Affiliations |
1Drohobych Ivan Franko State Pedagogical University, 24, I. Franko St., 82100 Drohobych, Ukraine 2Lviv Polytechnic National University, Lviv, Ukraine 3K.D. Ushinsky South Ukrainian National Pedagogical University, Odesa, Ukraine |
| Е-mail | |
| Issue | Volume 13, Year 2021, Number 4 |
| Dates | Received 21 March 2021; revised manuscript received 15 August 2021; published online 25 August 2021 |
| Citation | V.B. Brytan, R.M. Peleshchak, Y.O. Uhrun, et al., J. Nano- Electron. Phys. 13 No 4, 04024 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(4).04024 |
| PACS Number(s) | 73.40.Qv, 74.25.Fy |
| Keywords | Cd1 – xZnxTe single crystal, Resolution, Passivation, Deformation (8) , Electrostatic-deformation. |
| Annotation |
An electrostatic-deformation model of atomic hydrogen passivation of electrically active centers of the type of compression defects in Cd1 – xZnxTe semiconductors is proposed. It is found that the effect of increasing passivation of electrically active centers in Cd1 – xZnxTe occurs when the concentration of atomic hydrogen NH does not exceed the concentration of acceptors NA (NH ≤ NA), and weakening of the passivation effect is observed when the concentration of atomic hydrogen NH is much higher than the concentration of acceptors NA (NH ≥ NA). The expression for the resolution Ri of optical-registering metal-dielectric-semiconductor nanostructures Cd1 – xZnxTe (0 ≤ x ≤ 1) is obtained and the resolution value for nonpassivated as well as for passivated in the hydrogen atmosphere semiconductor material Cd0.8Zn0.2Te is calculated, which is R1 = 6682 and R2 = 17423, respectively. A method for expanding the spectral range of optical information recording based on n-p-i-m nanostructures by changing the composition (0 ≥ x ≥ 1) of the solid solution Cd1 – xZnxTe is proposed. |
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