Design of Al:ZnO/p-Si Heterojunction Solar Cell Using SCAPS Simulation Program
| Authors | S.A. Najim1 , K.M. Muhammed2 , A.D. Pogrebnjak2 |
| Affiliations |
1University of Mosul, Al Majmoaa St., 41002 Mosul, Iraq 2Sumy State University, 2, Rymsky-Korsakov St., 40007 Sumy, Ukraine |
| Е-mail | alexp@i.ua |
| Issue | Volume 13, Year 2021, Number 4 |
| Dates | Received 21 March 2021; revised manuscript received 06 August 2021; published online 20 August 2021 |
| Citation | S.A. Najim, K.M. Muhammed, A.D. Pogrebnjak, J. Nano- Electron. Phys. 13 No 4, 04028 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(4).04028 |
| PACS Number(s) | 42.79.Ek, 78.66.Bz |
| Keywords | Al:ZnO thin films, Heterojunction solar cell, SCAPS (28) . |
| Annotation |
ZnO thin film is a prominent candidate to be used as a buffer layer in silicon solar cells. In this paper, the effect of Al concentrations (1, 5, 10 wt. %) on the conversion efficiency of Al:ZnO/Si thin film solar cells has been investigated through simulation by SCAPS program. It has been found that the main photovoltaic parameters such as open-circuit voltage, short-circuit current density, fill factor, conversion efficiency, quantum efficiency and ideality factor increased as Al enrichment occurred. At 10 wt. % of Al the optimum conversion efficiency was approximately 7 %, the maximum value of the ideality factor was 17.51, and the bandgap value was 3.56 eV. Additionally, the resistivity, carrier concentration and mobility were determined for all measurements. It has been found that a decrease in the Hall coefficient led to an increase in the carrier concentration with increasing Al content, while an increase in the mobility occurred due to a decrease in the electrical resistivity. The quantum efficiency of the solar cell measured at a wavelength in the range of 400-1000 nm was between 0.4-0.5. |
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