Influence of the NaCl Dielectric Layer on the Electrical Properties of Graphite/n-Cd1 – xZnxTe Schottky Diodes Fabricated by Transferring Drawn Graphite

Authors M.M. Solovan1 , H.P. Parkhomenko1, V.V. Brus2, A.I. Mostovyi1, P.D. Maryanchuk1
Affiliations

1Yuriy Fedkovych Chernivtsi National University, 2 Kotsyubynskyi St., 58012 Chernivtsi, Ukraine

2Department of Physics, School of Sciences and Humanities, Nazarbayev University, Nur-Sultan, Kazakhstan

Е-mail [email protected]
Issue Volume 13, Year 2021, Number 4
Dates Received 21 March 2021; revised manuscript received 11 August 2021; published online 20 August 2021
Citation M.M. Solovan, H.P. Parkhomenko, et al., J. Nano- Electron. Phys. 13 No 4, 04008 (2021)
DOI https://doi.org/10.21272/jnep.13(4).04008
PACS Number(s) 85.30.Hi, 85.30.Kk
Keywords Graphite, Structures (23) , CdZnTe (2) , I-V characteristics (2) .
Annotation

This paper reports the results of an investigation of the electrical properties of graphite/n-Cd1 – xZnxTe Schottky diodes prepared by the transfer of dry drawn graphite films on Cd1 – xZnxTe substrates. The Cd1 – xZnxTe solid solution with low Zn content was grown by the Bridgman method at low cadmium vapor pressure and had a low resistivity  ≈ 102 Ohmcm. The values of the series Rs and shunt Rsh resistances of graphite/n-Cd1 – xZnxTe and graphite/NаCl/n-Cd1 – xZnxTe Schottky diodes were determined from the dependence of their differential resistance Rdif. The height of the potential barrier of graphite/n-Cd1 – xZnxTe and graphite/NаCl/n-Cd1 – xZnxTe Schottky diodes was determined by the extrapolation of the linear segments of the I-V characteristics at room temperature toward the interception with the voltage axis and was equal 0.63 eV and 1.12 eV, respectively. The largest value of the potential barrier height for the sample graphite/NаCl/n-Cd1 – xZnxTe was achieved by the presence of the NaCl dielectric layer. The dominant mechanisms of charge transport through graphite/n-Cd1 – xZnxTe and graphite/NаCl/n-Cd1 – xZnxTe Schottky diodes were described in the scope of generation-recombination and tunneling models (for forward and reverse bias, respectively).

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