Structural, Dielectric and AC Conductivity Behavior of Multicomponent TeO2-ZnO-Li2O-Na2O-B2O3 Glasses

Authors B. Shruthi1, B.J. Madhu2

1Department of Chemistry, Dr. Ambedkar Institute of Technology, 560056 Bangalore, India

2Post Graduate Department of Physics, Government Science College, 577501 Chitradurga, India

Issue Volume 13, Year 2021, Number 4
Dates Received 21 March 2021; revised manuscript received 10 August 2021; published online 20 August 2021
Citation B. Shruthi, B.J. Madhu, J. Nano- Electron. Phys. 13 No 4, 04019 (2021)
PACS Number(s) 61.43.Fs, 72.80.Ng, 77.22.Gm
Keywords Oxide glasses, FTIR (29) , Raman (37) , Dielectric constant (8) , Dielectric loss tangent, Conductivity analysis.

Multicomponent glasses of the TeO2-ZnO-Li2O-Na2O-B2O3 (TZLNB) system have been prepared by conventional melt quenching method. Synthesized glasses were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR), Raman and UV-Visible spectroscopic techniques. The amorphous nature of these glasses has been confirmed by their XRD pattern. In the present TZLNB glass, B2O3 is found to transform into a complex network, which involves a boroxol ring coupled with a fourfold-coordinated boron (BO4) due to non-bridging oxygens. The frequency dependences of dielectric constant (ε′), dielectric loss tangent (tanδ) and ac conductivity (ac) studies have been undertaken on the TZLNB glasses in the frequency range 50 Hz-5 MHz at room temperature. Dielectric properties such as dielectric constant and dielectric loss tangent are found to decrease with increasing frequency. Present TZLNB glasses are found to possess high dielectric constant and very low dielectric loss in the studied frequency range. Further, ac conductivity is found to increase with increasing frequency due to an increased density of mobile ions for conduction. Present TZLNB glasses possess excellent dielectric properties such as high dielectric constant and very low dielectric loss and thought to be the most promising dielectric material for the memory cell capacitors in dynamic random-access memory (DRAM) chips.

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