The Mathematical Model of Radio-measuring Frequency Transducer of Optical Radiation Based on MOS Transistor Structures with Negative Differential Resistance

Authors A.V. Osadchuk, I.O. Osadchuk, A.O. Semenov
Affiliations

Vinnytsia National Technical University, 95, Khmelnytske shose St., 21021 Vinnytsia, Ukraine

Е-mail [email protected]
Issue Volume 13, Year 2021, Number 4
Dates Received 21 March 2021; revised manuscript received 09 August 2021; published online 20 August 2021
Citation A.V. Osadchuk, I.O. Osadchuk, A.O. Semenov, J. Nano- Electron. Phys. 13 No 4, 04001 (2021)
DOI https://doi.org/10.21272/jnep.13(4).04001
PACS Number(s) 85.30.Pq
Keywords Mathematical model (7) , Thermal modes, Optical radiation, MOS transistor, Negative resistance.
Annotation

The article deals with results of theoretical and experimental studies of a radio-measuring frequency transducer of optical radiation based on MOS transistor structures with negative differential resistance and an active inductive element. Analytical expressions of the transfer function and sensitivity equations are obtained on the basis of the solution of a system of non-linear equations. Experimental studies of the current-voltage dependences of the proposed transistor structure of the frequency converter of optical radiation in static and dynamic modes confirm the presence of a section with negative differential resistance on the I-V characteristic, which compensates for the losses in the oscillatory circuit. The theoretical and experimental dependences of the frequency of generation on the power of optical radiation are presented. The dependence of sensitivity of the developed transducer on the power of optical radiation varies from 9.7 kHz/μW/cm2 to 24.5 kHz/μW/cm2. A mathematical model of the thermal conditions of a radio-measuring frequency transducer of optical radiation has been developed. The calculation of non-stationary thermal conditions of the frequency transducer allowed to obtain the temperature field of the transducer integrated circuit. The time to achieve the steady state does not exceed 5.8·10 – 4 s. Moreover, the maximum temperature of overheating for the elements of the integrated circuit of the transducer does not exceed 2.49 ºC.

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