High Pressure Growth Approach for the Preparation of Reduced Graphene Oxide and its Investigation Using Raman Spectroscopy
| Authors | Mamta Thakran1, Sumeet Kumar1, Rohit Phogat1, S.K. Ray2, R. Brajpuriya3, Abhimanyu Singh Rana4, Brijesh Kumar1,5, 6 |
| Affiliations |
1Centre for Nano Science & Technology, Amity Institute of Nanotechnology, Amity University, Haryana, India 2Centre for Stem Cell, Amity Institute of Biotechnology, Amity University, Haryana, India 3University of Petroleum and Energy Studies, Department of Physics, School of Engineering, Dehradun, India 4BML Munjal University, Gurugram, Haryana, India 5Amity School of Engineering & Technology, Amity University, Haryana, India 6Amity Institute of Laser Technology & Optoelectronics, Amity University, Haryana, India |
| Е-mail | bkumar2@ggn.amity.edu |
| Issue | Volume 13, Year 2021, Number 4 |
| Dates | Received 21 March 2021; revised manuscript received 06 August 2021; published online 20 August 2021 |
| Citation | Mamta Thakran, Sumeet Kumar, Rohit Phogat, et al., J. Nano- Electron. Phys. 13 No 4, 04015 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(4).04015 |
| PACS Number(s) | 81.05.ue, 81.07. – b, 61.46.Df, 78.30. – j, 81.90. + c |
| Keywords | High pressure growth, Modified Hummers method, Raman spectroscopy (18) , Graphene oxide (2) , (2956) . |
| Annotation |
Graphene derivatives show extraordinary mechanical, optical, and electronic properties, which gave rise to high scientific interest and huge potential for a variety of applications. Raman spectroscopy is a versatile tool to characterize and identify the chemical and physical properties of graphene derivatives. We describe essential Raman scattering processes of the first- (G) and second-order (D, G*, 2D, G + D, 2G) modes in GO and r-GO prepared by a high-pressure growth approach. In r-GO, the linewidth is broadened and slightly red-shifted in all the bands, in comparison with GO because of strain development during the high-pressure growth approach (hydrothermal process) as a result of removal of oxygen functionalities. A normalized intensity ratio (ID/IG) for GO and r-GO is discussed. In both the samples, ID/IG is high which indicates the small size of GO and r-GO and the presence of turbostratic carbon and disordered structures. The peak fitting of the 2D band exhibits four Lorentzian peaks, and the intensity of the 2D band with respect to the G band is strongly reduced, which confirms that we have successfully synthesized bilayer/trilayer GO and r-GO. For GO and r-GO, the crystallite size (La) is calculated. The existence of the 2D band confirms that we have successfully synthesized high-quality GO and r-GO. |
|
List of References |
Other articles from this number
1) The Mathematical Model of Radio-measuring Frequency Transducer of Optical Radiation Based on MOS Transistor Structures with Negative Differential Resistance [04001-1-04001-6]2) Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode [04002-1-04002-5]
3) Effect of the Spin-orbit Interaction on the Electronic Band Energies in Cadmium Chalcogenides Evaluated within the HSE06-GW Approach [04003-1-04003-5]
4) Improvement of Electrical Properties of Grätzel Cells by Tuning the Dye Layer with CdS/ZnO Junction [04004-1-04004-5]
5) Thickness Dependent Magnetic Study of Fe Thin Films [04005-1-04005-3]
6) Optical and Dispersion Parameters of the Al-doped ZnO Thin Film [04006-1-04006-7]
7) Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT [04007-1-04007-5]
8) Influence of the NaCl Dielectric Layer on the Electrical Properties of Graphite/n-Cd1 – xZnxTe Schottky Diodes Fabricated by Transferring Drawn Graphite [04008-1-04008-4]
9) Influence of Ionizing Irradiation on Magnetosensitive Transistor Structures [04009-1-04009-4]
10) Magnetostatic Fields in Multilayer Composite Films with a Bimodal Granule Size Distribution [04010-1-04010-5]
11) Luminescent Properties of Electrochemically Etched Gallium Arsenide [04011-1-04011-6]
12) Generator of EEG Delta Rhythms Based on Si Nanowires [04012-1-04012-5]
13) Nanofluids in Cooling Systems and Their Efficiency [04013-1-04013-8]
14) Dielectric Spectroscopy of Ferroelectric Crossbred PVDF-ZnO Polymer Composite Thin Films [04014-1-04014-5]
15) Annealing Effects on the Optoelectronic Performance of Au and CuO Nanoparticles Incorporated P3HT/PCBM Solar Cells [04016-1-04016-6]
16) Theoretical Simulations of the Structural Stability, Elastic, Electronic, Magnetic and Thermodynamic Properties of New Half-metallic Cr2GdSn1 – xPbx Alloys [04017-1-04017-7]
17) Study of the Effect of Absorber Layer Thickness of CIGS Solar Cells with Different Band Gap Using SILVACO TCAD [04018-1-04018-5]
18) Structural, Dielectric and AC Conductivity Behavior of Multicomponent TeO2-ZnO-Li2O-Na2O-B2O3 Glasses [04019-1-04019-5]
19) Photoelectric and Electrical Properties of Composite Materials Based on n-InSe and Graphite [04020-1-04020-4]
20) Study of a New Device Structure: Graphene Field Effect Transistor (GFET) [04021-1-04021-5]
21) Effect of Sintering Temperature and Aluminum Concentration on the Hardness, Microstructure and Density of Copper-Aluminum Alloys [04022-1-04022-4]
22) Topological 3D Model of the Functioning of a Dynamic System – Cognitive Estimation of Complexity [04023-1-04023-6]
23) Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures [04024-1-04024-6]
24) Diagnostic Visualization of Changes in Biological Tissues by Ultrasound method Based on Doppler Effect [04025-1-04025-4]
25) Hydrogen Physisorption on BNC Heterostructures: A Systematic Theoretical Study [04026-1-04026-9]
26) Plural Three-Wave Resonant Interactions in the Transit Section of Two-Stream Superheterodyne FEL with a Longitudinal Electric Field [04027-1-04027-6]
27) Design of Al:ZnO/p-Si Heterojunction Solar Cell Using SCAPS Simulation Program [04028-1-04028-4]
28) Matrix of Photosensitive Elements for Determining the Coordinates of the Source of Optical Radiation [04029-1-04029-6]
29) Numerical Simulation of Field-effect Transistorwith a Channel in the Form of a Nanowire [04030-1-04030-4]
30) The Spectrum of Natural Frequencies of Acoustic Oscillations of a Spherical Quantum Dot with a Multilayer Shell [04031-1-04031-5]
31) Solid-state Dewetting Formation of In/InTe Nanosystem [04032-1-04032-5]
32) Study of the Temperature Coefficient of the Main Photoelectric Parameters of Silicon Solar Cells with Various Nanoparticles [04033-1-04033-5]
33) Electron Beam Technology in Optoelectronic Instrumentation: High-quality Curved Surfaces and Microprofile Creation in Different Geometric Shapes [04034-1-04034-5]
34) Peculiarity of Magnetoresistance of Composite Materials Based on Co and SiO [04035-1-04035-4]
35) Precision Synchronization of Chaotic Optical Systems [04036-1-04036-5]
36) Microstructure Analysis of Friction Stir Welding of Aluminum Alloy 6061 Coated with Copper Nanofilm [04037-1-04037-4]
