Optical and Dispersion Parameters of the Al-doped ZnO Thin Film
| Authors | A.I. Kashuba1 , B. Andriyevsky2 , H.A. Ilchuk1 , R.Yu. Petrus1 , T.S. Malyi3, I.V. Semkiv1 |
| Affiliations |
1Lviv Polytechnic National University, 12, S. Bandera St., 79646 Lviv, Ukraine 2Faculty of Electronics and Computer Sciences, Koszalin University of Technology, 75-453 Koszalin, Poland 3Ivan Franko National University of Lviv, 8, Kyrylo and Mefodiy St., 79005 Lviv, Ukraine |
| Е-mail | ashuba07@gmail.com |
| Issue | Volume 13, Year 2021, Number 4 |
| Dates | Received 09 March 2021; revised manuscript received 06 August 2021; published online 20 August 2021 |
| Citation | A.I. Kashuba, B. Andriyevsky, H.A. Ilchuk, et al., J. Nano- Electron. Phys. 13 No 4, 04006 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(4).04006 |
| PACS Number(s) | 78.20. − e, 78.20.Ci, 78.55.Et |
| Keywords | Thin films (60) , Absorption (17) , Dispersion (19) , Refractive index (3) , Transmission (16) , Optical function, Relaxation time. . |
| Annotation |
The results of studies of the dispersion of optical functions and optical constants for zinc oxide thin film doped with aluminum are presented. The deposition of Al-doped ZnO (2.5 wt. %) thin films is performed by magnetron sputtering. Al-doped ZnO thin film crystallizes in a hexagonal structure (structure type ZnO, space group P63mc (No. 186) with unit-cell dimensions a 3.226(2) Å and c 5.155(6) Å (V 46.49(6) Å3). Optical transmittance spectra (300-2500 nm) shows that the Al-doped ZnO thin film is of high optical quality, and the value of the optical band gap (3.26 eV) is very close to undoped samples. The study of optical functions is performed on the basis of the experimentally measured transmission spectrum using the bypass method. The spectral behavior of optical functions, such as refractive index, extinction coefficient, absorption index, dielectric functions and optical conductivity, is established. The value of Urbach energy and the dependence of oscillator strength on the size of the band gap and the concentration of doping element are determined. It is observed an increase in Urbach energy for the Al-doped ZnO thin film in comparison to the undoped ones. An almost twofold increase in the optical oscillator strength value is revealed for the thin film studied. The influence of aluminum doping on the dynamic change of optical mobility, optical resistance and relaxation time is established for the first time for the studied compound. The value of the plasma frequency is also determined and its correlation with the carrier density is defined. The doping of ZnO thin films with aluminum leads to an increase in optical mobility, relaxation time and plasma frequency that is revealed by comparison with reference data for the undoped ZnO. Due to good optical properties, this thin film is a good candidate as a material for optoelectronic devices. |
|
List of References |
Other articles from this number
1) The Mathematical Model of Radio-measuring Frequency Transducer of Optical Radiation Based on MOS Transistor Structures with Negative Differential Resistance [04001-1-04001-6]2) Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode [04002-1-04002-5]
3) Effect of the Spin-orbit Interaction on the Electronic Band Energies in Cadmium Chalcogenides Evaluated within the HSE06-GW Approach [04003-1-04003-5]
4) Improvement of Electrical Properties of Grätzel Cells by Tuning the Dye Layer with CdS/ZnO Junction [04004-1-04004-5]
5) Thickness Dependent Magnetic Study of Fe Thin Films [04005-1-04005-3]
6) Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT [04007-1-04007-5]
7) Influence of the NaCl Dielectric Layer on the Electrical Properties of Graphite/n-Cd1 – xZnxTe Schottky Diodes Fabricated by Transferring Drawn Graphite [04008-1-04008-4]
8) Influence of Ionizing Irradiation on Magnetosensitive Transistor Structures [04009-1-04009-4]
9) Magnetostatic Fields in Multilayer Composite Films with a Bimodal Granule Size Distribution [04010-1-04010-5]
10) Luminescent Properties of Electrochemically Etched Gallium Arsenide [04011-1-04011-6]
11) Generator of EEG Delta Rhythms Based on Si Nanowires [04012-1-04012-5]
12) Nanofluids in Cooling Systems and Their Efficiency [04013-1-04013-8]
13) Dielectric Spectroscopy of Ferroelectric Crossbred PVDF-ZnO Polymer Composite Thin Films [04014-1-04014-5]
14) High Pressure Growth Approach for the Preparation of Reduced Graphene Oxide and its Investigation Using Raman Spectroscopy [04015-1-04015-5]
15) Annealing Effects on the Optoelectronic Performance of Au and CuO Nanoparticles Incorporated P3HT/PCBM Solar Cells [04016-1-04016-6]
16) Theoretical Simulations of the Structural Stability, Elastic, Electronic, Magnetic and Thermodynamic Properties of New Half-metallic Cr2GdSn1 – xPbx Alloys [04017-1-04017-7]
17) Study of the Effect of Absorber Layer Thickness of CIGS Solar Cells with Different Band Gap Using SILVACO TCAD [04018-1-04018-5]
18) Structural, Dielectric and AC Conductivity Behavior of Multicomponent TeO2-ZnO-Li2O-Na2O-B2O3 Glasses [04019-1-04019-5]
19) Photoelectric and Electrical Properties of Composite Materials Based on n-InSe and Graphite [04020-1-04020-4]
20) Study of a New Device Structure: Graphene Field Effect Transistor (GFET) [04021-1-04021-5]
21) Effect of Sintering Temperature and Aluminum Concentration on the Hardness, Microstructure and Density of Copper-Aluminum Alloys [04022-1-04022-4]
22) Topological 3D Model of the Functioning of a Dynamic System – Cognitive Estimation of Complexity [04023-1-04023-6]
23) Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures [04024-1-04024-6]
24) Diagnostic Visualization of Changes in Biological Tissues by Ultrasound method Based on Doppler Effect [04025-1-04025-4]
25) Hydrogen Physisorption on BNC Heterostructures: A Systematic Theoretical Study [04026-1-04026-9]
26) Plural Three-Wave Resonant Interactions in the Transit Section of Two-Stream Superheterodyne FEL with a Longitudinal Electric Field [04027-1-04027-6]
27) Design of Al:ZnO/p-Si Heterojunction Solar Cell Using SCAPS Simulation Program [04028-1-04028-4]
28) Matrix of Photosensitive Elements for Determining the Coordinates of the Source of Optical Radiation [04029-1-04029-6]
29) Numerical Simulation of Field-effect Transistorwith a Channel in the Form of a Nanowire [04030-1-04030-4]
30) The Spectrum of Natural Frequencies of Acoustic Oscillations of a Spherical Quantum Dot with a Multilayer Shell [04031-1-04031-5]
31) Solid-state Dewetting Formation of In/InTe Nanosystem [04032-1-04032-5]
32) Study of the Temperature Coefficient of the Main Photoelectric Parameters of Silicon Solar Cells with Various Nanoparticles [04033-1-04033-5]
33) Electron Beam Technology in Optoelectronic Instrumentation: High-quality Curved Surfaces and Microprofile Creation in Different Geometric Shapes [04034-1-04034-5]
34) Peculiarity of Magnetoresistance of Composite Materials Based on Co and SiO [04035-1-04035-4]
35) Precision Synchronization of Chaotic Optical Systems [04036-1-04036-5]
36) Microstructure Analysis of Friction Stir Welding of Aluminum Alloy 6061 Coated with Copper Nanofilm [04037-1-04037-4]
