Working Characteristics Simulation of p+-CuO / p-ZnTe / n-CdSe / n-MoSe2 / Mo Solar Cell

Authors A.S. Opanasyuk1 , M.M. Ivashchenko2, I.P. Buryk2, V.A. Moroz2

1 Sumy State University, 2, Rimsky-Korsakov Str., 40007 Sumy, Ukraine

2 Konotop Institute, Sumy State University, 24, Myru Ave., 41600 Konotop, Ukraine

Issue Volume 7, Year 2015, Number 2
Dates Received 05 March 2015; published online 10 June 2015
Citation A.S. Opanasyuk, M.M. Ivashchenko, I.P. Buryk, V.A. Moroz, J. Nano- Electron. Phys. 7 No 2, 02037 (2015)
PACS Number(s) 85.60.Bt, 78.20.Bh, 73.61.Ga
Keywords Solar cell (51) , p-ZnTe / n-CdSe heterojunction, Simulation (34) , Fill factor (2) , Solar cell efficiency.
Annotation In this paper it was carried out the simulation of the main working characteristics (light I-V curves, quantum yield spectral dependencies) of CuO / ZnTe / CdSe / MoSe2 / Mo solar cell (SC). As a study result there were determined open-circuit voltage UOC, short-circuit current density JSC, fill-factor FF, and the device’s efficiency depending on its constructive features (window, absorber and per-contact layers thickness) and working temperature. There were estimated SC’s parameters with the maximum conversion efficiency of solar energy.

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