Extracted Electronic Parameters of a Novel Ag/SnO2:In/Si/Au Schottky Diode for Solar Cell Application

Authors Mostefa Benhaliliba

Material Technology Department, Physics Faculty, USTOMB University, BP1505 Oran, Algeria

Issue Volume 7, Year 2015, Number 2
Dates Received 19 February 2015; published online 10 June 2015
Citation Mostefa Benhaliliba, J. Nano- Electron. Phys. 7 No 2, 02029 (2015)
PACS Number(s) 85.30.Hi, 85.30.Kk
Keywords Schottky diode (10) , Tin oxide (8) , Current-voltage measurements, Ideality factor (10) .
Annotation The effect of indium on the characteristics of Ag / SnO2 : In / Si / Au Schottky diode (SD) is studied. The electronic parameters, ideal factor, the effective barrier, flat band barrier height, the series resistance, the saturation current density of the diodes were extracted from the current voltage (I-V) and capacitance voltage (C-V) characteristics. The series resistance (Rs) determined by Cheung method increases (508-534 Ω) with In doping level while the barrier height still constant around 0.57 V. Norde approximation gives a similar barrier height values of 0.69 V but the series resistance reaches higher values of 5500 Ω.

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