Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity

Authors V.N. Murashev1 , S.Yu. Yurchuk1 , S.A. Legotin1 , V.P. Yaromskiy2 , Yu.V. Osipov1, V.P. Astahov1 , D.S. El’nikov1 , S.I. Didenko1 , O.I. Rabinovich1 , K.A. Kuz’mina1

1 NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia

2 JSC "Scientific-production plant for measure technique”, 2, Pioneer St., 141070, Moscow region, Korolev, Russia

Issue Volume 7, Year 2015, Number 2
Dates Received 27 April 2015; published online 10 June 2015
Citation V.N. Murashev, S.Yu. Yurchuk, S.A. Legotin, et al., J. Nano- Electron. Phys. 7 No 2, 02023 (2015)
PACS Number(s) 00.05.Tp, 85.60.Jb
Keywords Silicon p-i-n-photodiode characteristics simulation, Spectral sensitivity (2) , Optimization design of photodetectors.
Annotation In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive structures characteristics in order to optimize them were investigated.

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