The Features of Decay Kinetics of Photovoltage in Silicon Crystals Used in Solar Energy Caused by Weak Stationary Magnetic Field

Authors L.P. Steblenko1 , O.A. Korotchenkov1 , A.A. Podolyan1 , D.V. Kalinichenko1 , A.N. Kuryliuk1 , Yu.L. Kobzar1 , A.N. Krit2, S.N. Naumenko

1 Faculty of Physics, Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska Str., 01601 Kyiv, Ukraine

2 Scientific Research Center "Physicochemical materials" Taras Shevchenko National University of Kyiv and NAS of Ukraine, 01601 Kyiv, Ukraine

Issue Volume 7, Year 2015, Number 1
Dates Received 12 September 2014; revised manuscript received 17 February 2015; published online 25 March 2015
Citation L.P. Steblenko, O.A. Korotchenkov, A.A. Podolyan, et al., J. Nano- Electron. Phys. 7 No 1, 01036 (2015)
PACS Number(s), 61.43.Dq, 61.72.Hh, 73.40.Qv
Keywords Solar-Si (2) , Carrier lifetime, Magnetic field (7) , Charged impurities.
Annotation The influence of a weak stationary magnetic field on the decay kinetics of photovoltage in solar-Si crystals is studied. The features in the behavior of electrophysical parameters showed that the stability of the short-term and long-term components of photovoltage depends on the duration of magnetic treatment. Short time of magnetic treatment leads to increase, and long magnetic treatment causes reduction both components of photovoltage in comparison with control crystals. It is revealed that character of magnitostimulated change of photovoltage kinetics correlates with a charge condition of surface.

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