Effect of Nanosized Tin Oxide Layer on the Efficiency of Photovoltaic Processes in Film Solar Cells Based on Cadmium Telluride

Authors G.S. Khrypunov1 , O.V. Pirohov1, D.A. Kudiy1, R.V. Zaitsev1 , A.L. Khrypunova1 , V.A. Gevorkyan2, P.P. Gladyshev3

1 National Technical University “Kharkiv Polytechnic Institute”

2 Russian-Armenian (Slavonic) University, 123, Hovsep Emin Str., 0051 Yerevan, Armenia

3 “Dubna International University”, 19, Universitetskay Str., 141980 Dubna, Moscow Region, Russia

Issue Volume 7, Year 2015, Number 1
Dates Received 02 October 2014; published online 25 March 2015
Citation G.S. Khrypunov, O.V. Pirohov, D.A. Kudiy, et al., J. Nano- Electron. Phys. 7 No 1, 01016 (2015)
PACS Number(s) 81.40.Ef, 61.05. – Cp, 68.57. – Hk
Keywords Thin film solar cells, Glass and flexible substrates, Tin dioxide, Cadmium sulfide and cadmium telluride.
Annotation The influence of the thickness of the nanosized layer on the efficiency of photoelectric processes in solar cells (SC) ITO / SnO2 / CdS / CdTe / Cu / Au formed on different substrates was investigated. For device structures formed on the glass substrates, the maximum efficiency of 11.4 % is achieved when thickness of the tin oxide layer is 80 nm. For flexible solar cells formed on a polyimide film, the maximum efficiency of 10.8 % is observed when thickness of the tin oxide layer is 50 nm. This paper discusses the physical mechanisms of the observed differences in efficiency.

List of References