Features of Stress State of Germanium Nanocrystals in SiOx Matrix

Authors V.V. Kuryliuk1 , O.A. Korotchenkov1 , Z.F. Tsybrii2, A.S. Nikolenko2, V.V. Strelchuk2
Affiliations

1 Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska Str., 01601 Kyiv, Ukraine

2 Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41, Nayki Prosp, 03028 Kyiv, Ukraine

Е-mail [email protected]
Issue Volume 7, Year 2015, Number 1
Dates Received 09 February 2015; published online 25 March 2015
Citation V.V. Kuryliuk, O.A. Korotchenkov, Z.F. Tsybrii, et al., J. Nano- Electron. Phys. 7 No 1, 01029 (2015)
DOI
PACS Number(s) 68.65.Hb, 78.67.Hc
Keywords Nanocrystal (14) , Quantum dot (12) , Mechanical stress (2) , Heterostructure (7) .
Annotation Features of mechanical stress in germanium nanocrystals synthesised in amorphous SiОx matrix with SixNy buffer layer were studied by means of Fourier transform infrared absorption spectroscopy, Raman scattering and computer modeling. It was found that the germanium nanocrystals are under significant compressive stress with a magnitude of up to 2.9 GPa. Such a high strain value can be explained by a partial penetration of the nanocrystals in the silicon substrate. In this case the principal source of mechanical stress is the lattice mismatch between silicon and germanium.

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