Investigation of the Irradiation Influence with High-energy Electronson the Electrical Parameters of the IGBT-transistors

Authors V.N. Murashev , M.P. Konovalov, S.A. Legotin , S.I. Didenko , O.I. Rabinovich , A.A. Krasnov , K.A. Кuzmina

National University of Science and Technology 'MISiS'  “Moscow Institute of Steel and Alloys”, 4, Leninskiy prosp., 119040 Moscow, Russian Federation

Issue Volume 7, Year 2015, Number 1
Dates Received 15 October 2014; revised manuscript received 16 January 2015; published online 25 March 2015
Citation V.N. Murashev, M.P. Konovalov, S.A. Legotin, et al., J. Nano- Electron. Phys. 7 No 1, 01011 (2015)
PACS Number(s) 00.05.Tp, 85.60.Jb
Keywords IGBT-transistors, Irradiation (10) , Systems (5) , Radioisotope (4) .
Annotation The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed.

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