Morphology of Islet Systems Formed During Melting of Continuous Bi Films on Ge and SiO2 Substrates

Authors A.P. Kryshtal , A.A. Minenkov , S.S. Dzhus

V.N. Karazin Kharkiv National University, 4, Svobody Sq., 61022 Kharkov, Ukraine

Е-mail [email protected]
Issue Volume 7, Year 2015, Number 1
Dates Received 22 October 2014; revised manuscript received 11 March 2015; published online 25 March 2015
Citation A.P. Kryshtal, A.A. Minenkov, S.S. Dzhus, J. Nano- Electron. Phys. 7 No 1, 01024 (2015)
PACS Number(s) 68.55.J –, 68.08.Bc, 68.37.Hk
Keywords Thin films (60) , Wetting (2) , Film agglomeration, Scanning electron microscopy (16) .
Annotation The results of electron microscopic studies of arrays of nanoparticles formed by melting of solid polycrystalline Bi films on amorphous Ge and SiO2 substrates are presented. It has been shown that the islet structure with a small spread of particle’ size has formed as a result of self-organization during the melting of bismuth on an inert SiO2 substrate. The connection between the basic characteristics of these particles and the thickness of the initial films were determined. It has been shown that melting of bismuth on the amorphous germanium substrate leads to formation of disordered arrays of nanoparticles. The morphological structure of these ones depends on the nature of interaction between the components of the film-substrate interface.

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