Tin Sulfide Films Obtained by Sulfurization of Electrodeposited Tin Precursors

Authors N.P. Klochko1 , О.V. Momotenko1, V.M. Lyubov1 , N.D. Volkovа2, V.R. Kopach1 , G.S. Khrypunov1 , M.V. Kirichenko1 , R.V. Zaitsev1
Affiliations

1 National Technical University “Kharkiv Polytechnic Institute”, 21, Frunze Str., 61002 Kharkiv, Ukraine

2 N. Zhukovsky National Aerospace University “Kharkiv Aviation Institute”, 17, Chkalova Str., 61070 Kharkiv, Ukraine

Е-mail klochko_np@mail.ru
Issue Volume 7, Year 2015, Number 1
Dates Received 02 September 2014; published online 25 March 2015
Citation N.P. Klochko, О.V. Momotenko, V.M. Lyubov, et al., J. Nano- Electron. Phys. 7 No 1, 01014 (2015)
DOI
PACS Number(s) 68.55.Ag ,81.15.Pq
Keywords Tin sulfide SnS, Electrochemical deposition (2) , Sulfurization, Precursor (2) , Semiconductor (62) .
Annotation This article is devoted to the development of cost-effective and suitable for large-scale production method for obtaining thin films of tin sulfide SnS for photovoltaic applications. Thin films of SnS with orthorhombic structure (Herzenbergite) were synthesized by sulfurization in sulfur vapor of tin films electrodeposited from a standard tinning solution. SnS synthesized polycrystalline material was an electronic semiconductor with bandgap and optical absorption coefficient optimum for utilization in solar cell.

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