Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT)

Authors Abhishek Mukherjee, Prachi Sharma, Navneet Gupta
Affiliations

Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani-Campus, Rajasthan, 333031 India

Е-mail [email protected]
Issue Volume 5, Year 2013, Number 4
Dates Received 19 July 2013; published online 31 January 2014
Citation Abhishek Mukherjee, Prachi Sharma, Navneet Gupta, J. Nano- Electron. Phys. 5 No 4, 04054 (2013)
DOI
PACS Number(s) 85.30.De
Keywords Grain boundaries (2) , Nanocrystalline silicon (5) , TFT (3) .
Annotation This work presents the effect of grain boundaries in nanocrystalline silicon thin-film transistors (nc-Si TFT). In this study, it is assumed that the nanocrystalline silicon film which is used as the channel material in TFT consists of grain boundaries perpendicular as well as parallel to the carrier flow. Analytical model for mobility due to perpendicular GBs (perp) and mobility due to parallel GBs (parallel) are developed separately and then the overall (effective) mobility, FE, is calculated incorporating both type of GBs. Thereafter the overall (effective) mobility µFE and drain current are plotted as a function of gate voltage. The trend observed from the theoretical plot of drain current versus gate voltage is in agreement with the experimentally observed trend.

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