Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation

Authors A.B. Gnilenko1,2, S.V. Plaksin2
Affiliations

1 Oles Honchar Dnipropetrovsk National University, 72, Gagarin Ave., 49010 Dnipropetrovsk, Ukraine

2 Institute of Transport Systems and Technologies NASU, 5, Pisargevskogo Str., 49005 Dnipropetrovsk, Ukraine

Е-mail [email protected]
Issue Volume 5, Year 2013, Number 4
Dates Received 10 October 2013; published online 31 January 2014
Citation A.B. Gnilenko, S.V. Plaksin, J. Nano- Electron. Phys. 5 No 4, 04057 (2013)
DOI
PACS Number(s) 73.40.Lq, 78.20.Bh, 84.60.Jt
Keywords Solar cell (51) , Triple-junction, Mechanically stacked, GaInP / GaAs / Si, Silvaco TCAD (3) .
Annotation Mechanically stacked triple-junction GaInP / GaAs / Si solar cell is simulated by Silvaco TCAD computer software and compared to more conventional GaInP / GaAs / Ge mechanically stacked configuration. External quantum efficiency, I-V characteristics and basic I-V parameters are obtained to demonstrate the advantages of using the silicon active substrate as the bottom sub-cell instead of the germanium substrate based bottom sub-cell.

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