Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation
| Authors | A.B. Gnilenko1,2, S.V. Plaksin2 |
| Affiliations | 1 Oles Honchar Dnipropetrovsk National University, 72, Gagarin Ave., 49010 Dnipropetrovsk, Ukraine 2 Institute of Transport Systems and Technologies NASU, 5, Pisargevskogo Str., 49005 Dnipropetrovsk, Ukraine |
| Е-mail | gnilenko@ua.fm |
| Issue | Volume 5, Year 2013, Number 4 |
| Dates | Received 10 October 2013; published online 31 January 2014 |
| Citation | A.B. Gnilenko, S.V. Plaksin, J. Nano- Electron. Phys. 5 No 4, 04057 (2013) |
| DOI | |
| PACS Number(s) | 73.40.Lq, 78.20.Bh, 84.60.Jt |
| Keywords | Solar cell (51) , Triple-junction, Mechanically stacked, GaInP / GaAs / Si, Silvaco TCAD (3) . |
| Annotation | Mechanically stacked triple-junction GaInP / GaAs / Si solar cell is simulated by Silvaco TCAD computer software and compared to more conventional GaInP / GaAs / Ge mechanically stacked configuration. External quantum efficiency, I-V characteristics and basic I-V parameters are obtained to demonstrate the advantages of using the silicon active substrate as the bottom sub-cell instead of the germanium substrate based bottom sub-cell. |
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List of References |
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