Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous Silicon

Authors I.B. Olenych

Ivan Franko National University of Lviv, 50, Dragomanov Str., 79005 Lviv, Ukraine

Е-mail [email protected]
Issue Volume 5, Year 2013, Number 4
Dates Received 11 September 2013; published online 31 January 2014
Citation I.B. Olenych, J. Nano- Electron. Phys. 5 No 4, 04072 (2013)
PACS Number(s) 73.63. – b, 73.50.Gr
Keywords Porous silicon (3) , Thermal oxidation, Mechanisms of conductivity, Thermally Stimulated Depolarization, Charge traps.
Annotation The temperature dependences of the electrical conductivity of porous silicon and thermally oxidized porous silicon in the modes of direct and alternating currents in the temperature range of 80-370 K are investigated. The results are analyzed within the model of disordered semiconductors and the mechanisms of charge transfer are determined. Based on the spectra of thermally stimulated depolarization, the localized electron states which influence the electric transport properties of porous silicon are found. It is shown that thermal oxidation leads to the change in the occupation density of states in different energy ranges and expansion of the temperature range, in which hopping conductivity mechanism of porous silicon is realized.

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