Elastic, Optoelectronic and Thermal Properties of Boron Phosphide

Authors S. Daoud1, N. Bioud2, L. Belagraa3, N. Lebgaa2
Affiliations

1 Faculté des Sciences et de la Technologie, Université de Bordj Bou Arreridj, 34000, Algérie

2 Laboratoire d'Optoélectronique et Composants, Université Ferhat Abbes- Sétif, 19000, Algérie

3 Laboratoire Matériaux et Systèmes Electroniques, Université de Bordj Bou Arreridj, 34000, Algérie

Е-mail [email protected], [email protected]
Issue Volume 5, Year 2013, Number 4
Dates Received 02 March 2013; revised manuscript received 18 April 2013; published online 31 January 2014
Citation S. Daoud, N. Bioud, L. Belagraa, N. Lebgaa, J. Nano- Electron. Phys. 5 No 4, 04061 (2013)
DOI
PACS Number(s) 45.10. Ab, 62. 20. Dx, 81.40.Jj
Keywords Elastic (13) , Optoelectronic and thermal properties, (B3) BP.
Annotation Elastic, mechanical, optoelectronic and some thermal properties of boron phosphide (BP) in its structure zincblende phase has been performed using the pseudopotential combined with the plane wave method. The plane-wave pseudopotential approach to the density-functional theory within the local density approximation (LDA) implemented in Abinit code is used. The elastic stiffness and compliance constants, bulk modulus, shear modulus, zener anisotropy factor, young's modulus, internal strain parameter, poisson's ratio, sound velocity for directions within the important crystallographic planes, Debye temperature, melting point, refractive index, plasmon energy, force constants, lattice energy, band gap energy, homopolar energy, heteropolar energy, ionicity and dielectric constant are obtained and analyzed in comparison with the available data.

List of References