Electrical Properties of Porous Silicon Nanocrystals in a Dielectric Matrix
| Authors | I. Olenych1, I. Girnyk1, L. Orovcík2 |
| Affiliations |
1Ivan Franko National University of Lviv, 50, Dragomanov St., 79005 Lviv, Ukraine 2Institute of Materials and Machine Mechanics Slovak Academy of Sciences, Dubravska cesta 9, 84513 Bratislava, Slovak Republic |
| Е-mail | iolenych@gmail.com |
| Issue | Volume 11, Year 2019, Number 5 |
| Dates | Received 07 June 2019; revised manuscript received 20 October 2019; published online 25 October 2019 |
| Citation | I. Olenych, I. Girnyk, L. Orovcík, J. Nano- Electron. Phys. 11 No 5, 05016 (2019) |
| DOI | https://doi.org/10.21272/jnep.11(5).05016 |
| PACS Number(s) | 73.63.–b, 81.07.–b |
| Keywords | Porous silicon (3) , Electrical conductivity (10) , Impedance (12) , Activation energy (7) , Thermally stimulated depolarization, Charge traps. |
| Annotation |
In this work, the porous silicon nanocrystals were obtained in a dielectric matrix. Porous silicon layers obtained by photoelectrochemical etching of single-crystalline wafers with the [100] and [111] crystallographic orientations were separated from the silicon substrate using epoxy resin. Systems of the porous silicon nanoparticles were characterized by scanning electron microscopy. The dimensions of the silicon nanocrystals varied from several to tens of nanometers in the cross-section. On the basis of comprehensive studies by impedance spectroscopy and thermal activation methods, processes of transfer and relaxation of non-equilibrium charge carriers have been studied. Impedance model of obtained nanosystems was constructed and its electrical parameters were determined. The internal resistance of free-standing porous silicon nanocrystals was more than 10 GOhms and was several orders of magnitude higher than the typical resistance of the porous layer on the silicon substrate. Activation mechanism of charge transport in the 270-350 K temperature range was found and the activation energy of the conductivity was determined. Based on the spectra of thermally stimulated depolarization current, the localized electron states that affect the charge transport in the porous silicon nanosystems were revealed. The calculated energy distribution of the filling density of states has a maximum in the 0.45-0.6 eV energy range. The found trap levels of nonequilibrium carriers are probably related to the electrically active defects at the interface between silicon nanocrystals and the epoxy resin. |
|
List of References |
Other articles from this number
1) Heat Transport in One-dimensional Dimer Chain [05001-1-05001-5]2) Effect of Glow-discharge Hydrogen Plasma Treatment on Zinc Oxide Layers Prepared through Pulsed Electrochemical Deposition and via SILAR Method [05002-1-05002-7]
3) Basic Study of Mono-like Silicon Material Properties under Chemical Treatments: Comparison with Single and mc-Silicon [05003-1-05003-5]
4) Structural and Piezoelectric Properties of BSb under High Pressure: a DFT Study [05004-1-05004-4]
5) Analytical Estimation of Recombination Current of Sharp Asymmetric p-n Junction [05005-1-05005-8]
6) Growth of Palladium Thin Film Deposited on Stainless Steel Current Electrodes by Wet Chemical Method for Actived Carbon Supercapacitor and Their Electrochemical Properties [05006-1-05006-5]
7) Effect of Porous GaAs Layer Morphology on Pd/porous GaAs Schottky Contact [05007-1-05007-5]
8) Evaluation and Extraction of Electrical Parameters of Different Photovoltaic Models Using Iterative Methods [05008-1-05008-7]
9) Effect of Increasing Concentrations on Sprayed Cu2ZnSnS4 Thin Films [05009-1-05009-5]
10) High-vacuum Pump of Orbitron Type: Electrophysical Principles of Work and Design Features [05010-1-05010-7]
11) Structural, Optical, Morphological and Thermal Properties of CuO Nanoparticles Prepared by Sol-gel Technique [05011-1-05011-4]
12) The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction [05012-1-05012-5]
13) Physical Interpretations of Internal Magnetic Field Influence on Processes in Tribocontact of Textured Dimple Surfaces [05013-1-05013-5]
14) Density of Surface States in 3D Topological Insulators in the Presence of Magnetic Field with Hexagonal Warping Effect [05014-1-05014-6]
15) Functionalized Carbon Nanotubes on Porous Silicon for Sensing Application [05015-1-05015-4]
16) Synthesis and Characterization of Cu Doped ZnS Thin Films Deposited by Spin Coating [05017-1-05017-6]
17) Simulation of Spherical Metal Nanoclusters Containing Monovacancy [05018-1-05018-8]
18) Impact of Defects on Quality Contact Systems for Photoelectric Converters [05019-1-05019-5]
19) Structure, Electrical and Corrosion Properties of Quasicrystalline Al–Cu–Fe–Sc Thin Films [05020-1-05020-5]
20) Forced Precession of a Ferromagnetic Nanoparticle with a Finite Anisotropy Suspended in a Liquid: Nonlinear Aspects [05021-1-05021-5]
21) Space Charge Wave with Broad Frequency Spectrum Formation in Transit Section of Klystron-type Two-stream FEL with Helical Electron Beam [05022-1-05022-8]
22) The Gruneisen Parameter and the Apparent Part of the General Measure of Anharmonicity of Solid Solutions of the Fe-Ni System [05023-1-05023-4]
23) DFT-modeling of Ammonia Molecules Protonation on a p-type Silicon Surface [05024-1-05024-4]
24) Optical and Electrical Properties of n-type Porous Silicon Produced by Electrochemical Etching and Study the Influence of γ-irradiation [05025-1-05025-6]
25) Enhanced Optical and Dielectric Properties of PANI/rGO Nanocomposites for Supercapacitor Application [05026-1-05026-5]
26) Effect of Deviation from Stoichiometry on Thermoelectric Properties of Bi2Te3 Polycrystals and Thin Films in the Temperature Range 77-300 K [05027-1-05027-6]
27) Formation and Modeling of Nanosized Levels of the Self-organized Structures in the Non-crystalline Thin Films of Ge-As-Te(S, Se) Systems [05028-1-05028-8]
28) Physics and Technology of Heterosystems with Films of Germanium and Germanium with Gallium [05029-1-05029-4]
29) Effective Masses of Carriers in the Degenerate Conduction Band: Interplay of Density of Electronic States Peculiarities and Magnetization [05030-1-05030-6]
30) Influence of Technology on the Formation of Luminescence Centers in CdS Quantum Dots [05031-1-05031-4]
31) Electronic and Magnetic Properties of RMO3 (M Co, Fe) Perovskites: a First Principle Study [05032-1-05032-5]
32) Use of the Adsorbed Organic Molecules as Dopants for Creation of the Built-in Lateral p-n Junctions in a Sheet of Black Phosphorene [05033-1-05033-5]
33) Modification of Surface of ZnO:Mn Nanocrystals Synthesized by the Cryochemical Method [05034-1-05034-5]
34) Modeling of Photon Crystals of Microwave Range Using Interference Matrixes [05035-1-05035-4]
35) Actual Problems of Computer Parametric Identification of the NMR and NQR spectra: a Review [05036-1-05036-10]
36) Tribotechnical Properties of (TiZr)N/(TiSi)N Multilayer Coatings with Nanometer Thickness [05037-1-05037-4]
37) Electrochemical Investigation of Nitrogen Doped Graphene Oxide/Yttrium Oxide Nanocomposites [05038-1-05038-4]
38) Effect of Graphene Nanoplatelet Concentration on the Thermal Conductivity of Silicone Thermal Grease [05039-1-05039-4]
39) Effect of Grain Size on Strain in a Copper Oxide Nanofilm for Gas Sensing Applications [05040-1-05040-4]
40) Effect of Nickel Ions Substitution on the Structural and Electrical Properties of a Nanosized Lithium-iron Ferrite Obtained by the Sol-gel Auto-combustion Method [05041-1-05041-7]
41) Effect of rGO Concentration on the Thermal Stability of PANI/rGO Nanocomposites [05042-1-05042-3]
42) Optical Properties of ZnSe Quantum Dots in Carbon Matrices [05043-1-05043-3]
