Optical and Electrical Properties of n-type Porous Silicon Produced by Electrochemical Etching and Study the Influence of γ-irradiation
| Authors | A.A. Sulaiman1, A.A.K. Muhammed2, M.M. Ivashchenko3 |
| Affiliations |
1Department of Physics, College of Science, University of Mosul, Mosul, Iraq 2Sumy State University, 2, Rimsky-Korsakov St., 40007 Sumy, Ukraine 3Konotop Institute of Sumy State University, 24, Myru Ave., 41615 Konotop, Ukraine |
| Е-mail | |
| Issue | Volume 11, Year 2019, Number 5 |
| Dates | Received 13 May 2019; revised manuscript received 23 October 2019; published online 25 October 2019 |
| Citation | A.A. Sulaiman, A.A.K. Muhammed, M.M. Ivashchenko, J. Nano- Electron. Phys. 11 No 5, 05025 (2019) |
| DOI | https://doi.org/10.21272/jnep.11(5).05025 |
| PACS Number(s) | 68.55.ag, 72.10.Bg |
| Keywords | Porous silicon (3) , Irradiation (10) , Electrochemical etching. |
| Annotation |
Porous silicon layers were prepared by electrochemical etching. We study the physical and structural properties of porous silicon. Scanning electron microscopy (SEM) and cross sectional SEM have been used to study the effect of γ-irradiation on the pore size of PSi for various irradiation doses. The growth in pore width can be attributed to an increasing holes number on the Si surface with increasing γ-irradiation dose. The cross-section of the PSi layer shows micrographs of the morphology of the PSi layer perpendicular to the Si surface, with side branches in the orientation. The transmittance spectra of the PSi were obtained in the range 320-1200 nm with increasing γ-irradiation at 100 Gy, the transmittance of the PSi is decreased and the reflectance of PSi shows the largest reflectance with increasing irradiation. The analysis of photoluminescence spectra has been shown that the formation of fully penetrated porous silicon can lead to a decrease of the photoluminescence intensity with increasing of γ irradiation dose. It may be caused by the increase of the specific surface area and by the bigger band gap value of PSi than for bulk Si. Electrical measurements such as resistivity, conductivity, barrier height, and ideality factor were investigated. The barrier height has small value and the decrease in the barrier height is due to the interface between PSi layer and Si wafer which acts as a defect in the interface and also due to the saturation current has maximum value at 100 Gy dose. The ideality factor increased from 1.544 to 17.563 at dose 100 Gy. The resistivity of the porous silicon was 105-104 (.cm which decreased as the irradiation dose of γ-ray increased. The photocurrent spectrum in the range 1.25-3.00 eV shows porous silicon irradiated at dose 100 Gy which contains two peaks at 2.13 and 2.77 eV which lie in the visible region. |
|
List of References |
Other articles from this number
1) Heat Transport in One-dimensional Dimer Chain [05001-1-05001-5]2) Effect of Glow-discharge Hydrogen Plasma Treatment on Zinc Oxide Layers Prepared through Pulsed Electrochemical Deposition and via SILAR Method [05002-1-05002-7]
3) Basic Study of Mono-like Silicon Material Properties under Chemical Treatments: Comparison with Single and mc-Silicon [05003-1-05003-5]
4) Structural and Piezoelectric Properties of BSb under High Pressure: a DFT Study [05004-1-05004-4]
5) Analytical Estimation of Recombination Current of Sharp Asymmetric p-n Junction [05005-1-05005-8]
6) Growth of Palladium Thin Film Deposited on Stainless Steel Current Electrodes by Wet Chemical Method for Actived Carbon Supercapacitor and Their Electrochemical Properties [05006-1-05006-5]
7) Effect of Porous GaAs Layer Morphology on Pd/porous GaAs Schottky Contact [05007-1-05007-5]
8) Evaluation and Extraction of Electrical Parameters of Different Photovoltaic Models Using Iterative Methods [05008-1-05008-7]
9) Effect of Increasing Concentrations on Sprayed Cu2ZnSnS4 Thin Films [05009-1-05009-5]
10) High-vacuum Pump of Orbitron Type: Electrophysical Principles of Work and Design Features [05010-1-05010-7]
11) Structural, Optical, Morphological and Thermal Properties of CuO Nanoparticles Prepared by Sol-gel Technique [05011-1-05011-4]
12) The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction [05012-1-05012-5]
13) Physical Interpretations of Internal Magnetic Field Influence on Processes in Tribocontact of Textured Dimple Surfaces [05013-1-05013-5]
14) Density of Surface States in 3D Topological Insulators in the Presence of Magnetic Field with Hexagonal Warping Effect [05014-1-05014-6]
15) Functionalized Carbon Nanotubes on Porous Silicon for Sensing Application [05015-1-05015-4]
16) Electrical Properties of Porous Silicon Nanocrystals in a Dielectric Matrix [05016-1-05016-5]
17) Synthesis and Characterization of Cu Doped ZnS Thin Films Deposited by Spin Coating [05017-1-05017-6]
18) Simulation of Spherical Metal Nanoclusters Containing Monovacancy [05018-1-05018-8]
19) Impact of Defects on Quality Contact Systems for Photoelectric Converters [05019-1-05019-5]
20) Structure, Electrical and Corrosion Properties of Quasicrystalline Al–Cu–Fe–Sc Thin Films [05020-1-05020-5]
21) Forced Precession of a Ferromagnetic Nanoparticle with a Finite Anisotropy Suspended in a Liquid: Nonlinear Aspects [05021-1-05021-5]
22) Space Charge Wave with Broad Frequency Spectrum Formation in Transit Section of Klystron-type Two-stream FEL with Helical Electron Beam [05022-1-05022-8]
23) The Gruneisen Parameter and the Apparent Part of the General Measure of Anharmonicity of Solid Solutions of the Fe-Ni System [05023-1-05023-4]
24) DFT-modeling of Ammonia Molecules Protonation on a p-type Silicon Surface [05024-1-05024-4]
25) Enhanced Optical and Dielectric Properties of PANI/rGO Nanocomposites for Supercapacitor Application [05026-1-05026-5]
26) Effect of Deviation from Stoichiometry on Thermoelectric Properties of Bi2Te3 Polycrystals and Thin Films in the Temperature Range 77-300 K [05027-1-05027-6]
27) Formation and Modeling of Nanosized Levels of the Self-organized Structures in the Non-crystalline Thin Films of Ge-As-Te(S, Se) Systems [05028-1-05028-8]
28) Physics and Technology of Heterosystems with Films of Germanium and Germanium with Gallium [05029-1-05029-4]
29) Effective Masses of Carriers in the Degenerate Conduction Band: Interplay of Density of Electronic States Peculiarities and Magnetization [05030-1-05030-6]
30) Influence of Technology on the Formation of Luminescence Centers in CdS Quantum Dots [05031-1-05031-4]
31) Electronic and Magnetic Properties of RMO3 (M Co, Fe) Perovskites: a First Principle Study [05032-1-05032-5]
32) Use of the Adsorbed Organic Molecules as Dopants for Creation of the Built-in Lateral p-n Junctions in a Sheet of Black Phosphorene [05033-1-05033-5]
33) Modification of Surface of ZnO:Mn Nanocrystals Synthesized by the Cryochemical Method [05034-1-05034-5]
34) Modeling of Photon Crystals of Microwave Range Using Interference Matrixes [05035-1-05035-4]
35) Actual Problems of Computer Parametric Identification of the NMR and NQR spectra: a Review [05036-1-05036-10]
36) Tribotechnical Properties of (TiZr)N/(TiSi)N Multilayer Coatings with Nanometer Thickness [05037-1-05037-4]
37) Electrochemical Investigation of Nitrogen Doped Graphene Oxide/Yttrium Oxide Nanocomposites [05038-1-05038-4]
38) Effect of Graphene Nanoplatelet Concentration on the Thermal Conductivity of Silicone Thermal Grease [05039-1-05039-4]
39) Effect of Grain Size on Strain in a Copper Oxide Nanofilm for Gas Sensing Applications [05040-1-05040-4]
40) Effect of Nickel Ions Substitution on the Structural and Electrical Properties of a Nanosized Lithium-iron Ferrite Obtained by the Sol-gel Auto-combustion Method [05041-1-05041-7]
41) Effect of rGO Concentration on the Thermal Stability of PANI/rGO Nanocomposites [05042-1-05042-3]
42) Optical Properties of ZnSe Quantum Dots in Carbon Matrices [05043-1-05043-3]
