Analytical Estimation of Recombination Current of Sharp Asymmetric p-n Junction
| Authors | A.B. Galat , A.L. Donchenko |
| Affiliations |
Kharkiv National University of Radio Electronics, 14, Nauky Ave., 61166 Kharkiv, Ukraine |
| Е-mail | |
| Issue | Volume 11, Year 2019, Number 5 |
| Dates | Received 24 May 2019; revised manuscript received 21 October 2019; published online 25 October 2019 |
| Citation | A.B. Galat, A.L. Donchenko, J. Nano- Electron. Phys. 11 No 5, 05005 (2019) |
| DOI | https://doi.org/10.21272/jnep.11(5).05005 |
| PACS Number(s) | 73.40.Lq |
| Keywords | Recombination through traps, Current of recombination, Coefficient of ideality, Differential coefficient of ideality, Photoelectric converter, Errors of calculation. |
| Annotation |
When simulating an asymmetric p-n junction, the high-alloyed region in the approximation of small currents does not affect the distribution of carriers in the low-alloyed region, in which the entire volume charge is concentrated. In this paper, an analytical estimate of the recombination current through traps in the space charge region and in the quasi-neutral region was made. To obtain an analytical representation, an approximation of the linearity of the potential distribution in the vicinity of the maximum recombination cross section is used. A method is proposed to analytically estimate the integral of the specific volume recombination rate over a region of the space charge that cannot be taken through elementary functions. The possibility of increasing the accuracy of the analytical estimate of the recombination current through traps in the space charge region was confirmed. The differential ideality coefficient is determined and its dynamics is analyzed depending on the voltage at the junction. Comparative analysis of the following recombination current estimates was made: the recombination current in the space charge region by elementary estimate, the diffusion current from the low-alloyed quasi-neutral region, the recombination current through traps in the quasi-neutral region, the current in the case of a linear approximation of the potential in the region of maximum recombination through the analytical integral, the real recombination current. An analysis of the error in the calculation of the recombination current from the doping level of the low-doped region and the applied voltage is presented. From the above data it can be seen that the error estimate for calculating the current through the analytical integral does not exceed 10 %, which is quite enough for its use in simulating the recombination current of most power semiconductor devices. |
|
List of References |
Other articles from this number
1) Heat Transport in One-dimensional Dimer Chain [05001-1-05001-5]2) Effect of Glow-discharge Hydrogen Plasma Treatment on Zinc Oxide Layers Prepared through Pulsed Electrochemical Deposition and via SILAR Method [05002-1-05002-7]
3) Basic Study of Mono-like Silicon Material Properties under Chemical Treatments: Comparison with Single and mc-Silicon [05003-1-05003-5]
4) Structural and Piezoelectric Properties of BSb under High Pressure: a DFT Study [05004-1-05004-4]
5) Growth of Palladium Thin Film Deposited on Stainless Steel Current Electrodes by Wet Chemical Method for Actived Carbon Supercapacitor and Their Electrochemical Properties [05006-1-05006-5]
6) Effect of Porous GaAs Layer Morphology on Pd/porous GaAs Schottky Contact [05007-1-05007-5]
7) Evaluation and Extraction of Electrical Parameters of Different Photovoltaic Models Using Iterative Methods [05008-1-05008-7]
8) Effect of Increasing Concentrations on Sprayed Cu2ZnSnS4 Thin Films [05009-1-05009-5]
9) High-vacuum Pump of Orbitron Type: Electrophysical Principles of Work and Design Features [05010-1-05010-7]
10) Structural, Optical, Morphological and Thermal Properties of CuO Nanoparticles Prepared by Sol-gel Technique [05011-1-05011-4]
11) The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction [05012-1-05012-5]
12) Physical Interpretations of Internal Magnetic Field Influence on Processes in Tribocontact of Textured Dimple Surfaces [05013-1-05013-5]
13) Density of Surface States in 3D Topological Insulators in the Presence of Magnetic Field with Hexagonal Warping Effect [05014-1-05014-6]
14) Functionalized Carbon Nanotubes on Porous Silicon for Sensing Application [05015-1-05015-4]
15) Electrical Properties of Porous Silicon Nanocrystals in a Dielectric Matrix [05016-1-05016-5]
16) Synthesis and Characterization of Cu Doped ZnS Thin Films Deposited by Spin Coating [05017-1-05017-6]
17) Simulation of Spherical Metal Nanoclusters Containing Monovacancy [05018-1-05018-8]
18) Impact of Defects on Quality Contact Systems for Photoelectric Converters [05019-1-05019-5]
19) Structure, Electrical and Corrosion Properties of Quasicrystalline Al–Cu–Fe–Sc Thin Films [05020-1-05020-5]
20) Forced Precession of a Ferromagnetic Nanoparticle with a Finite Anisotropy Suspended in a Liquid: Nonlinear Aspects [05021-1-05021-5]
21) Space Charge Wave with Broad Frequency Spectrum Formation in Transit Section of Klystron-type Two-stream FEL with Helical Electron Beam [05022-1-05022-8]
22) The Gruneisen Parameter and the Apparent Part of the General Measure of Anharmonicity of Solid Solutions of the Fe-Ni System [05023-1-05023-4]
23) DFT-modeling of Ammonia Molecules Protonation on a p-type Silicon Surface [05024-1-05024-4]
24) Optical and Electrical Properties of n-type Porous Silicon Produced by Electrochemical Etching and Study the Influence of γ-irradiation [05025-1-05025-6]
25) Enhanced Optical and Dielectric Properties of PANI/rGO Nanocomposites for Supercapacitor Application [05026-1-05026-5]
26) Effect of Deviation from Stoichiometry on Thermoelectric Properties of Bi2Te3 Polycrystals and Thin Films in the Temperature Range 77-300 K [05027-1-05027-6]
27) Formation and Modeling of Nanosized Levels of the Self-organized Structures in the Non-crystalline Thin Films of Ge-As-Te(S, Se) Systems [05028-1-05028-8]
28) Physics and Technology of Heterosystems with Films of Germanium and Germanium with Gallium [05029-1-05029-4]
29) Effective Masses of Carriers in the Degenerate Conduction Band: Interplay of Density of Electronic States Peculiarities and Magnetization [05030-1-05030-6]
30) Influence of Technology on the Formation of Luminescence Centers in CdS Quantum Dots [05031-1-05031-4]
31) Electronic and Magnetic Properties of RMO3 (M Co, Fe) Perovskites: a First Principle Study [05032-1-05032-5]
32) Use of the Adsorbed Organic Molecules as Dopants for Creation of the Built-in Lateral p-n Junctions in a Sheet of Black Phosphorene [05033-1-05033-5]
33) Modification of Surface of ZnO:Mn Nanocrystals Synthesized by the Cryochemical Method [05034-1-05034-5]
34) Modeling of Photon Crystals of Microwave Range Using Interference Matrixes [05035-1-05035-4]
35) Actual Problems of Computer Parametric Identification of the NMR and NQR spectra: a Review [05036-1-05036-10]
36) Tribotechnical Properties of (TiZr)N/(TiSi)N Multilayer Coatings with Nanometer Thickness [05037-1-05037-4]
37) Electrochemical Investigation of Nitrogen Doped Graphene Oxide/Yttrium Oxide Nanocomposites [05038-1-05038-4]
38) Effect of Graphene Nanoplatelet Concentration on the Thermal Conductivity of Silicone Thermal Grease [05039-1-05039-4]
39) Effect of Grain Size on Strain in a Copper Oxide Nanofilm for Gas Sensing Applications [05040-1-05040-4]
40) Effect of Nickel Ions Substitution on the Structural and Electrical Properties of a Nanosized Lithium-iron Ferrite Obtained by the Sol-gel Auto-combustion Method [05041-1-05041-7]
41) Effect of rGO Concentration on the Thermal Stability of PANI/rGO Nanocomposites [05042-1-05042-3]
42) Optical Properties of ZnSe Quantum Dots in Carbon Matrices [05043-1-05043-3]
