Authors | O.Y. Nebesniuk , Z.A. Nikonova , A.A. Nikonova , S.L. Khrypko |
Affiliations |
Engineering Institute of Zaporizhzhya National University, 226, Soborny Ave., 69006 Zaporizhzhya, Ukraine |
Е-mail | 0811oksana@gmail.com |
Issue | Volume 11, Year 2019, Number 5 |
Dates | Received 27 April 2019; revised manuscript received 20 October 2019; published online 25 October 2019 |
Citation | O.Y. Nebesniuk, Z.A. Nikonova, A.A. Nikonova, S.L. Khrypko, J. Nano- Electron. Phys. 11 No 5, 05019 (2019) |
DOI | https://doi.org/10.21272/jnep.11(5).05019 |
PACS Number(s) | 85.40.Ls, 85.40.Ry |
Keywords | Plate (4) , Defects (12) , Epitaxial compositions, Contact systems, Photoelectric converters. |
Annotation |
Energy is a main factor and it stays at the center of economic, social and ecological tasks of modern development. The article suggests directions for improving the quality of traditional as well as the development of new semiconductor materials and different types of metallization. The use of epitaxial compositions for the production of photoelectric converters promises particularly great prospects. The tendencies of creation of the most complex electronic devices on the basis of multilayer epitaxial structures are clearly shown. At the same time, very high requirements are imposed on the electrophysical properties and perfection of the structure of each layer; the problems of creating perfect and sharp p-n junctions and hetero-boundaries on large areas of epitaxial compositions are posed. |
List of References |