Features of Low-Temperature GaAs Formation for Epitaxy Device Structures

Authors S.I. Krukovskyi1 , V. Arikov2, A.O. Voronko3, V.S. Antonyuk3

1Scientific Research Company ‘Electron-Carat’, 202, Stryiska St., 79031 Lviv Ukraine

2Lviv Polytechnic National University, 12, S. Bandera St., 79013 Lviv, Ukraine

3National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, 37, Peremohy Ave, 03056 Kyiv, Ukraine

Е-mail victor.antoniuk@gmail.com
Issue Volume 14, Year 2022, Number 2
Dates Received 18 February 2022; revised manuscript received 16 April 2022; published online 29 April 2022
Citation S.I. Krukovskyi, V. Arikov, A.O. Voronko, V.S. Antonyuk, J. Nano- Electron. Phys. 14 No 2, 02016 (2022)
DOI https://doi.org/10.21272/jnep.14(2).02016
PACS Number(s) 61.43Gt, 78.30Fs, 78.55m
Keywords Gallium arsenide, Rare-earth element, Profile of charge carrier distribution, Interface (7) , Terahertz range devices.

This article presents the results on the peculiarities of the formation of low-temperature gallium arsenide under the influence of complex doping with rare-earth elements ytterbium and aluminum. The electrophysical properties of the epitaxial layers were investigated by ECV profiling, and the structural characteristics using XRD. It is shown that at certain optimal concentrations of ytterbium ((3.0-3.2)·10 – 3 at. %) and aluminum (1·10 – 3 at %) it is possible to obtain structurally perfect GaAs epitaxial layers with a low concentration of carriers, and modulation of the rate of temperature decrease allows to obtain a sharper interface between layers with different doping levels. Such layers can be used in photodiode or microwave structures. It is established that an increase in the concentration of ytterbium in the melt causes deterioration of the structural properties of the layers due to the generation of additional defects, which can be used to create optoelectronic devices in the terahertz range.

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