Effect of the Conduction Band Offset on the Performance of GaAs/AlxGa1 – xAs Resonant Tunneling Diode

Authors M. Charmi
Affiliations

Department of Nano Physics, Malekashtar University of Technology, Shahinshahr, Isfahan, Iran

Е-mail [email protected]
Issue Volume 14, Year 2022, Number 2
Dates Received 05 February 2022; revised manuscript received 16 April 2022; published online 29 April 2022
Citation M. Charmi, J. Nano- Electron. Phys. 14 No 2, 02007 (2022)
DOI https://doi.org/10.21272/jnep.14(2).02007
PACS Number(s) 73.23.Ad, 73.61.Ey, 73.40.Gk
Keywords Conduction band offset, Non-equilibrium Green function (NEGF), Resonant Tunneling Diode (RTD), Al mole fraction, Quantum transport.
Annotation

This paper presents the effects of conduction band offset and aluminum mole fraction on performance of GaAs/AlxGa1 – xAs resonant tunneling diode using full quantum simulation. The simulation is based on a self-consistent solution of the Poisson equation and Schrodinger equation with open boundary conditions, within the non-equilibrium Green function formalism. A resonant tunneling diode structure consists of a 2 nm narrow band gap, a quantum well of GaAs is sandwiched between two thin wide band gap barriers of AlGaAs with a width of 2 nm. These three layers are sandwiched between two un-doped GaAs spacer layers with a width of 15 nm that are connected to two large reservoirs of high dopant GaAs contacts (1018 cm) with a width of 12 nm. The effects of varying Al mole fraction are investigated in terms of the conduction band, transmission function and output current. Simulation results illustrate that the device performance can be improved by proper selection of the mole fraction.

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