Quenching Effect on Mechanical Properties of In2Se2.7Sb0.3 Single Crystal
| Authors | Piyush J. Patel1, Sandip M. Vyas2, Vimal A. Patel2, Himanshu Pavagadhi2 , Ravi Varasada2, Maunik P. Jani3 |
| Affiliations |
1Department of Physics, Aditya Silver Oak Institute of Technology, Silver Oak University, Ahmedabad, 382481 Gujarat, India 2Department of Physics, School of Sciences, Gujarat University, Ahmedabad, 380009 Gujarat, India 3Department of Physics, Faculty of Science, The M.S. University of Baroda, Vadodara, 390002 Gujarat, India |
| Е-mail | physicsathgce@gmail.com |
| Issue | Volume 14, Year 2022, Number 2 |
| Dates | Received 11 January 2022; revised manuscript received 18 April 2022; published online 29 April 2022 |
| Citation | Piyush J. Patel, Sandip M. Vyas, et al., J. Nano- Electron. Phys. 14 No 2, 02001 (2022) |
| DOI | https://doi.org/10.21272/jnep.14(2).02001 |
| PACS Number(s) | 81.10. – h, 81.40.Cd, 81.40.Ef |
| Keywords | Bridgman method, Vickers hardness, As-cleavage, Quenching. |
| Annotation |
III-VI semiconductor compounds are interesting materials for the fabrication of such devices as ionizing radiation detectors, solid-state electrodes, ion batteries, as well as photosensitive heterostructures and solar cells. The structural complexity of In-Se family has motivated us to examine an unexplored composition (In2Se3) and its properties with antimony doping (Sb). The purpose of the present work is to study the influence of antimony on the novel configuration In2Se3. Ternary semiconductor compounds in the form of single crystals or thin films have attracted considerable interest because of their structural, optical and electrical properties, which allow them to be widely used in many electronic and optoelectronic devices. As the global energy market seeks applications that offer more efficient electronic systems, In2Se2.7Sb0.3 single crystals synthesized by the modified vertical Bridgeman technique pave the way for exciting innovations in solid-state photovoltaic systems and clean energy sectors. We have grown In2Se2.7Sb0.3 single crystal using the Bridgman-Stockbarger technique. The temperature gradient of the system was kept at 60 C/cm with a growth rate of 0.35 cm/h. Hardness testing is of significant importance in interpreting the mechanical behavior of materials and correlates with other physical properties. Hardness to deformation of as-grown crystals depends on the bond strength and structural perfection. The microhardness measurements of as-cleaved and quenched samples were made by using a Vickers projection microscope. In this paper, the results have been discussed and reported in detail. |
|
List of References |
Other articles from this number
1) Electrochemical Behavior of Pristine Mn2O3 Efficient Electrodes by Inexpensive Potentiostatic Electrodeposition Technique [02002-1-02002-6]2) Effect of Channel Material on the Performance Parameters of GAA MOSFET [02003-1-02003-5]
3) Improvement Analysis of Leakage Currents with Stacked High-k/Metal Gate in 10 nm Strained Channel HOI FinFET [02004-1-02004-4]
4) Room and High-Temperature Study of Rare Earth Chalcogenides [02005-1-02005-5]
5) Method of Measurements of Relative Permittivity and Dielectric Loss Tangent of Micropowders in a Wide Frequency Range [02006-1-02006-6]
6) Effect of the Conduction Band Offset on the Performance of GaAs/AlxGa1 – xAs Resonant Tunneling Diode [02007-1-02007-5]
7) Electrical Study of Au/GaN/GaAs (100) Structures as a Function of Frequency [02008-1-02008-4]
8) Highly Selective Behavior of Thin Film ZnO Based Homojunction Photodetector for UV Sensing [02009-1-02009-7]
9) The Effect of Channel Variation for Long Channel GaAs Junctionless Gate-All-Around Transistor [02010-1-02010-5]
10) Rapid Wet Chemical Synthesis of Cuprous Oxide (Cu2O) Nanoparticles: Effect of Precursor Concentration [02011-1-02011-5]
11) Numerical Study of the Temperature Dependence of CZTS-Based Thin Film Solar Cell [02012-1-02012-6]
12) Optical Conductivity of Spherical Metal Nanoparticles Taking into Account the Size Dependence of the Fermi Energy [02013-1-02013-6]
13) Influence of Sulfur Incorporation on the Structural, Optical and Electrical Properties of Chemically Deposited ZnSe Thin Films [02014-1-02014-5]
14) Miniaturized EBG Cavity Filter Loaded with Alumina 96 % for V-Band Applications [02015-1-02015-4]
15) Features of Low-Temperature GaAs Formation for Epitaxy Device Structures [02016-1-02016-5]
16) Electrical Properties of a Nanosynthesized PGDC Electrolyte Material [02017-1-02017-4]
17) Comparison of Characteristics of Thermostimulated Luminescence of CdS Nanostructures Obtained by Green Synthesis and Chemical Method [02018-1-02018-6]
18) Optical Properties of TiO2 Thin Film: Dip Coating Method [02019-1-02019-3]
19) Study of the Grüneisen Parameter of ZnO at High Pressures [02020-1-02020-4]
20) Effect of the Additive on the Properties of Ni-Fe Coating [02021-1-02021-4]
21) Bandwidth Enhanced Miniaturized Fractal Antenna Using Giuseppe Peano and Sierpinski Carpet for UWB and Satellite Applications [02022-1-02022-5]
22) A Comparative Theoretical Study of ZnO and BeO Oxides in Terms of Electronic Properties [02023-1-02023-3]
23) Square RR Loaded Microstrip Patch Antenna for ISM Band Applications [02024-1-02024-4]
24) Characterization of Magnesium/Barium Aluminates Spinel Synthesized by Sol-Gel Auto-Combustion Method [02025-1-02025-5]
25) Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111) [02026-1-02026-4]
26) Thermal Properties of EuO, DyO and GdO Compounds [02027-1-02027-4]
27) Modelling and Implementation of Double Gate n-channel FET with Strain Engineered Tri-Layered Channel System for Enriched Drain Current [02028-1-02028-5]
28) Characterization of Aluminum Gallium Arsenide (AlxGa1 – xAs) Semiconductors Using MATLAB [02029-1-02029-4]
29) Corrigendum to the Manuscript Entitled “Elastic, Optoelectronic and Thermal Properties of Boron Phosphide” [J. Nano- Electron. Phys. 5 No 4, 04061 (2013)] [02030-1-02030-1]
