Optical Properties of TiO2 Thin Film: Dip Coating Method

Authors Joginder Singh1,2, Astha Singh2, Kuldeep Kumar3, Kundan Kumar4, R.A. Zargar5
Affiliations

1Department of Physics, GDC-Nowshera, 185234 Rajouri, India

2Department of Physics, JJT University, 333001 Rajasthan, India

3Department of Physics, 181201 GDC Akhnoor, India

4Department of Physics, Ranchi University, 834008 Ranchi, India

5Department of Physics, Baba Ghulam Shah Bdshah University, 185234 Rajouri, India

Е-mail [email protected]
Issue Volume 14, Year 2022, Number 2
Dates Received 17 December 2021; revised manuscript received 27 April 2022; published online 29 April 2022
Citation Joginder Singh, Astha Singh, et al., J. Nano- Electron. Phys. 14 No 2, 02019 (2022)
DOI https://doi.org/10.21272/jnep.14(2).02019
PACS Number(s) 42.62.Fi, 61.46. – W, 77.22. – d
Keywords Optoelectronics (2) , Dip coating (4) , Thin film (101) , TiO2 (15) , Band gap (29) .
Annotation

Titanium dioxide (TiO2) thin films have found countless applications, and the fabricated films have different structures that can lead to additional or enhanced properties. The aim of this paper is to show the preparation and optical characteristics of TiO2 thin films obtained by sol-gel dip coating. TiO2 is a well-known semiconductor with possible applications in optoelectronics, such as solar cells, light emitting diodes, liquid crystal displays, etc. The various optical parameters such as refractive index, extinction coefficient, band gap and optical conductivity were calculated using different formulas with respect to wavelength in the UV-visible region. It is found that the direct band gap transition comes out to be 3.34 eV, whereas the refractive index and extinction coefficient show variation in the UV-visible range. TiO2 thin film shows Ti–O–Ti vibrational modes from IR spectra. This sort of research work will help us to find the best thin film coating technology for designing optoelectronic devices. This type of optical properties helps to optimize the best material/property relationship for promising devices.

List of References