Electrical Study of Au/GaN/GaAs (100) Structures as a Function of Frequency

Authors A.M. Benamara1, A.H. Kacha1, A. Talbi1 , B. Akkal1, Z. Benamara1 , S. Belarouci2

1Laboratoire de Micro-électronique Appliquée, Université Djillali Liabès de Sidi Bel Abbès, 22000 Sidi Bel Abbes, Algeria

2Ecole Supérieure en Sciences Appliquées de Tlemcen

Е-mail mekki_2007@yahoo.fr
Issue Volume 14, Year 2022, Number 2
Dates Received 11 February 2022; revised manuscript received 18 April 2022; published online 29 April 2022
Citation A.M. Benamara, A.H. Kacha, et al., J. Nano- Electron. Phys. 14 No 2, 02008 (2022)
DOI https://doi.org/10.21272/jnep.14(2).02008
PACS Number(s) 85.30.Hi, 85.30.Kk
Keywords GaN (34) , GaAs (21) , Schottky diode (10) , Series resistance, Interface states.

Various studies show that the nitridation of the GaAs surface improves the electrical quality of the Schottky diodes based on gallium arsenide. In order to observe this improvement, capacitance/conductance – voltage characteristics were investigated at three frequencies (50, 100 and 500 kHz). These characteristics were corrected by eliminating the effect of the series resistance. First, values of the series resistance were determined and plotted against voltage at different frequencies. The obtained curves show significant values of the series resistance with peaks observed at about – 0.5 V for 50 and 100 kHz frequencies and at 0.25 V for 500 kHz. These peaks are attributed to the ohmic back contact and the surface state density. The electrical properties of the fabricated Schottky diode were then calculated and the surface state density of the Schottky diode was estimated with and without the effect of the series resistance. Surface state density was significantly reduced after the elimination of the series resistance effect. Electrical parameters demonstrate an improvement of the electrical quality of the fabricated Au/GaN/GaAs Schottky diode.

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