Influence of Sulfur Incorporation on the Structural, Optical and Electrical Properties of Chemically Deposited ZnSe Thin Films

Authors T.A.H. Mir1, D.S. Patil2, B.K. Sonawane3
Affiliations

1 Smt. G.G. Khadse College, Muktainagar, Jalgaon 425306 M.S, India

2 Department of Electronics, School of Physical Sciences, Kavayitri Bahinabai Chaudhari North Maharashtra University, Jalgaon, 425001 M.S, India

3J .D.M.V.P. Co-Op. Samaj’s Arts, Commerce and Science College, Jalgaon, 425001 M.S, India

Е-mail [email protected]
Issue Volume 14, Year 2022, Number 2
Dates Received 12 February 2022; revised manuscript received 26 April 2022; published online 29 April 2022
Citation T.A.H. Mir, D.S. Patil, B.K. Sonawane, J. Nano- Electron. Phys. 14 No 2, 02014 (2022)
DOI https://doi.org/10.21272/jnep.14(2).02014
PACS Number(s) 73.61 Ga, 61.05.cp
Keywords Chemical bath deposition (4) , Sulfur incorporation, Optical analysis, Electrical resistivity (5) .
Annotation

The presented research aims to study the influence of sulfur incorporation on the optical, morphological, structural and electrical properties of chemically deposited zinc selenide thin films. The structural analysis reveals a peak shift of 0.47° of 2θ angle as the sulfur incorporation level increased from x = 0 (0 %) to x = 0.3 (15 %). The EDAX study shows that pure zinc selenide films are rich in selenium. With an increase in sulfur incorporation levels there is a continuous fall in selenium content. There is a significant reduction in variations in the range of grain sizes observed in SEM micrographs as the incorporation level increases. The transmittance is found to be higher in sulfur incorporated samples. The band gap energy is found to be increased from 2.63 to 3.17 eV with a rise in the sulfur incorporation level. An increase in the concentration of sulfur causes a rise in resistivity from 106 to 107 Ω×cm.

List of References