Numerical Study of the Temperature Dependence of CZTS-Based Thin Film Solar Cell

Authors Abd Elhalim Benzetta1, Mahfoud Abderrezek2, Mohammed Elamine Djeghlal3
Affiliations

1Laboratoire Génie des Matériaux, Ecole Militaire Polytechnique BP 17-Bordj El-Bahri, 16046 Alger, Algérie

2Unité de Développement des Equipements Solaires, UDES / Centre de Développement des Energies Renouvelables, CDER, 42415 Tipaza, Algérie

3Laboratoire de Sciences et Génie des Matériaux Ecole Nationale Polytechnique 10, Avenue Hassen Badi, B.P, 182 El-Harrach, Alger, Algérie

Е-mail [email protected]
Issue Volume 14, Year 2022, Number 2
Dates Received 12 November 2021; revised manuscript received 18 April 2022; published online 29 April 2022
Citation Abd Elhalim Benzetta, Mahfoud Abderrezek, Mohammed Elamine Djeghlal, J. Nano- Electron. Phys. 14 No 2, 02012 (2022)
DOI https://doi.org/10.21272/jnep.14(2).02012
PACS Number(s) 88.40.jm
Keywords CZTS (10) , Thin film (101) , SCAPS-1D (12) , Temperature (45) .
Annotation

In this paper, the effect of temperature on CZTS (Cu2ZnSnS4) thin film solar cell performance has been numerically investigated using Solar Cell Capacitance Simulator (SCAPS-1D). We have evaluated the temperature dependence of the energy band gap (Eg) of CZTS solar cell layers (ZnO, CdS and CZTS) between 300 and 350 K by Varshni formula. A decreased trend of Eg has been noticed with an average band gap narrowing coefficients around 1.48 ( 10 – 4, 3.61 ( 10 – 4 and 7.37 ( 10 – 4 eV/K for ZnO, CdS and CZTS, respectively. The obtained results reveal that Jsc increases, but Voc and FF decrease with respect to temperature. As a result, the efficiency falls from 12.08 % at 300 K to 11.87 % at 350 K with a coefficient variation of – 0.036 %/K. 300 K operating temperature is considered more appropriate to achieve high performances and get maximum efficiency under AM 1.5 G (1000 W/m2) solar spectrum.

List of References