The Effect of Channel Variation for Long Channel GaAs Junctionless Gate-All-Around Transistor

Authors M. Faidzal Rasol1, AinunT.1, Fatimah H.1, Zaharah J.1, Mastura S.Z.A.1, Rashidah A.1, Munawar A. Riyadi2

1School of Electrical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia, 81310 UTM, Johor Bahru, Malaysia

2Department of Electrical Engineering, Diponegoro University, Semarang, Indonesia

Issue Volume 14, Year 2022, Number 2
Dates Received 16 February 2022; revised manuscript received April 2022; published online 29 April 2022
Citation M. Faidzal Rasol, AinunT., Fatimah H., et al., J. Nano- Electron. Phys. 14 No 2, 02010 (2022)
PACS Number(s) 85.30.Tv
Keywords Short channel effects (5) , Quantum mechanical effects, Advanced material and structure.

Since the Moore era, the use of advanced nanomaterial device architecture has been introduced to improve its electrical performance. This paper reports on the study of performance of a long channel gallium arsenide (GaAs) nanowire Junctionless Gate-All-Around (JGAA) transistor, including the quantum mechanical effect. In order to include the quantum mechanical effect, the Poisson density gradient model is used to conduct the analysis. Therefore, the channel radius (Rchn), oxide thickness (TOX) and carrier concentration (Nd) were varied to study the electrical performances of the proposed device. Through simulation, it was found that the on-current (Ion) increases significantly by 54 % with a smaller oxide thickness and channel radius. This paper also highlights the drawback of the classical model, in which it is impossible to capture the quantum effect, where the current deviations show a 12 % difference between the classical model and the quantum model. The results presented here indicate the possibility of using JGAA transistor for future nanoelectronic device application.

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