Thermal Properties of EuO, DyO and GdO Compounds
| Authors | Uma Shankar Sharma1, Pankaj Kumar Mishra2 , Jyoti Mishra3, Ranjeet Brajpuriya4 |
| Affiliations |
1 Nano Lab, RJIT BSF Academy, Tekanpur, Gwalior (MP), India 2 Dept. of Applied Physics, Amity School of Engineering and Technology, Amity University Madhya Pradesh, Maharajpura Dang, Gwalior, India 3 Department of Applied Sciences, IPS College of Technology and Management, Gwalior, (M.P), India 4 Department of Physics, University of Petroleum and Energy Studies (UPES), Dehradun, India |
| Е-mail | ussharma001@gmail.com, ranjeetbjp1@gmail.com |
| Issue | Volume 14, Year 2022, Number 2 |
| Dates | Received 29 March 2021; revised manuscript received 21 April 2022; published online 29 April 2022 |
| Citation | Uma Shankar Sharma, Pankaj Kumar Mishra, Jyoti Mishra, Ranjeet Brajpuriya, J. Nano- Electron. Phys. 14 No 2, 02027 (2022) |
| DOI | https://doi.org/10.21272/jnep.14(2).02027 |
| PACS Number(s) | 05.70. – a, 72.15.Eb, 71.15.Mb |
| Keywords | Rare earth oxides, Thermal properties (2) , Density functional theory (DFT), Seebeck coefficient. |
| Annotation |
In this study, the thermal properties of EuO, DyO, and GdO compounds were investigated. The calculations were performed by using an ab initio approach based on the density functional theory (DFT) and exchange-correlation functional taken as generalized gradient approximation (GGA) and GGA + U (Hubbard Coulomb onsite correction) as implemented in the Quantum Espresso suite of codes. Results indicate that the Seebeck coefficient of the rare earth oxide is high at low temperatures, and it decreases with increasing temperature. The figure of merit (ZT) increases with temperature up to the studied temperature range and also shows the higher figure-of-merit obtained by DyO compound as compared with EuO and GdO, respectively. We obtained a maximum value of 0.008 of ZT at 800 K of DyO. |
|
List of References |
Other articles from this number
1) Quenching Effect on Mechanical Properties of In2Se2.7Sb0.3 Single Crystal [02001-1-02001-3]2) Electrochemical Behavior of Pristine Mn2O3 Efficient Electrodes by Inexpensive Potentiostatic Electrodeposition Technique [02002-1-02002-6]
3) Effect of Channel Material on the Performance Parameters of GAA MOSFET [02003-1-02003-5]
4) Improvement Analysis of Leakage Currents with Stacked High-k/Metal Gate in 10 nm Strained Channel HOI FinFET [02004-1-02004-4]
5) Room and High-Temperature Study of Rare Earth Chalcogenides [02005-1-02005-5]
6) Method of Measurements of Relative Permittivity and Dielectric Loss Tangent of Micropowders in a Wide Frequency Range [02006-1-02006-6]
7) Effect of the Conduction Band Offset on the Performance of GaAs/AlxGa1 – xAs Resonant Tunneling Diode [02007-1-02007-5]
8) Electrical Study of Au/GaN/GaAs (100) Structures as a Function of Frequency [02008-1-02008-4]
9) Highly Selective Behavior of Thin Film ZnO Based Homojunction Photodetector for UV Sensing [02009-1-02009-7]
10) The Effect of Channel Variation for Long Channel GaAs Junctionless Gate-All-Around Transistor [02010-1-02010-5]
11) Rapid Wet Chemical Synthesis of Cuprous Oxide (Cu2O) Nanoparticles: Effect of Precursor Concentration [02011-1-02011-5]
12) Numerical Study of the Temperature Dependence of CZTS-Based Thin Film Solar Cell [02012-1-02012-6]
13) Optical Conductivity of Spherical Metal Nanoparticles Taking into Account the Size Dependence of the Fermi Energy [02013-1-02013-6]
14) Influence of Sulfur Incorporation on the Structural, Optical and Electrical Properties of Chemically Deposited ZnSe Thin Films [02014-1-02014-5]
15) Miniaturized EBG Cavity Filter Loaded with Alumina 96 % for V-Band Applications [02015-1-02015-4]
16) Features of Low-Temperature GaAs Formation for Epitaxy Device Structures [02016-1-02016-5]
17) Electrical Properties of a Nanosynthesized PGDC Electrolyte Material [02017-1-02017-4]
18) Comparison of Characteristics of Thermostimulated Luminescence of CdS Nanostructures Obtained by Green Synthesis and Chemical Method [02018-1-02018-6]
19) Optical Properties of TiO2 Thin Film: Dip Coating Method [02019-1-02019-3]
20) Study of the Grüneisen Parameter of ZnO at High Pressures [02020-1-02020-4]
21) Effect of the Additive on the Properties of Ni-Fe Coating [02021-1-02021-4]
22) Bandwidth Enhanced Miniaturized Fractal Antenna Using Giuseppe Peano and Sierpinski Carpet for UWB and Satellite Applications [02022-1-02022-5]
23) A Comparative Theoretical Study of ZnO and BeO Oxides in Terms of Electronic Properties [02023-1-02023-3]
24) Square RR Loaded Microstrip Patch Antenna for ISM Band Applications [02024-1-02024-4]
25) Characterization of Magnesium/Barium Aluminates Spinel Synthesized by Sol-Gel Auto-Combustion Method [02025-1-02025-5]
26) Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111) [02026-1-02026-4]
27) Modelling and Implementation of Double Gate n-channel FET with Strain Engineered Tri-Layered Channel System for Enriched Drain Current [02028-1-02028-5]
28) Characterization of Aluminum Gallium Arsenide (AlxGa1 – xAs) Semiconductors Using MATLAB [02029-1-02029-4]
29) Corrigendum to the Manuscript Entitled “Elastic, Optoelectronic and Thermal Properties of Boron Phosphide” [J. Nano- Electron. Phys. 5 No 4, 04061 (2013)] [02030-1-02030-1]
