An Analogue Multiplier Using Carbon Nanotube Field-effect Transistor Technology
| Authors | Seyedehsomayeh Hatefinasab |
| Affiliations |
CENIMAT, Department of Materials Science, Faculty of Science and Technology, NOVA University of Lisbon, 2829-516 Caparica, Portugal |
| Е-mail | s.hatefinasab@campus.fct.unl.pt |
| Issue | Volume 11, Year 2019, Number 4 |
| Dates | Received 23 April 2019; revised manuscript received 02 August 2019; published online 22 August 2019 |
| Citation | Seyedehsomayeh Hatefinasab, J. Nano- Electron. Phys. 11 No 4, 04022 (2019) |
| DOI | https://doi.org/10.21272/jnep.11(4).04022 |
| PACS Number(s) | 85.35.Kt |
| Keywords | Carbon nanotube field-effect transistor, Analog multiplier, Low power, Single-walled CNT. |
| Annotation |
The endeavor to overcome problems of complementary metal oxide semiconductor technology (CMOS) makes the advent of carbon nanotube field-effect transistor (CNTFET). Improvement of carbon nanotube field-effect transistor structure leads to higher mobility and electrostatics of gate electrons. Therefore, many analog circuits are now designed based on carbon nanotube field-effect transistor technology. This paper presents a low power current mode four-quadrant analog multiplier based on CNTFET and CMOS technologies. All simulations were done with the synopsys Hspice simulator using 32 nm CNTFET model from Stanford University and 32 nm CMOS from PTM library at a supply voltage of 3.3 V. It was shown that the simulation of a multiplier based on carbon nanotube field-effect transistor technology performs better than a multiplier based on CMOS technology. |
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List of References |
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