Influence of Substrate Temperature on the Formation of Titanium Carbide Film

Authors O.E. Kaipoldayev , G.A. Baigarinova , R.R. Nemkayeva , N.R. Guseinov , Y.S. Mukhametkarimov , K. Tauasarov, O.Y. Prikhodko
Affiliations

Al-Farabi Kazakh National University, 71, Al-Farabi Ave., 050040 Almaty, Kazakhstan

Е-mail qaipolda@gmail.com
Issue Volume 11, Year 2019, Number 4
Dates Received 20 March 2019; revised manuscript received 05 August 2019; published online 22 August 2019
Citation O.E. Kaipoldayev, G.A. Baigarinova, R.R. Nemkayeva, et al., J. Nano- Electron. Phys. 11 No 4, 04003 (2019)
DOI https://doi.org/10.21272/jnep.11(4).04003
PACS Number(s) 61.50.Nw, 61.66.Fn
Keywords Magnetron sputtering (14) , Titanium carbide, Thin films (58) , Raman spectroscopy (18) .
Annotation

Titanium carbide films have shown an extensive development during the last decades as coating materials. Titanium carbide shows excellent mechanical and chemical properties like a high melting point, hardness and great chemical and thermal stability. Titanium carbide films were deposited on glass and monocrystalline silicon substrates by direct current (DC) magnetron ion-plasma sputtering process from graphite/titanium combined target. Titanium carbide films with various C/Ti ratios can be deposited by DC magnetron sputtering using titanium sheets on the graphite target erosion area as a solid carbon source. The dependence of substrate temperature (150, 250, 350, and 450 ) on the formation of titanium carbide phase was studied by X-ray diffraction analysis and Raman spectroscopy. The samples were studied by two different Raman spectrometers: AFM-Raman instrument Solver Spectrum (NT-MDT) with 473 nm laser and NTegra Spectra (NT-MDT) with 473 nm and 633 nm laser. The stoichiometry of deposited films was determined by energy-dispersive X-ray spectroscopy analysis.

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